Growth and characterization of Ag/n-ZnO/p-Si/Al heterojunction diode by sol–gel spin technique

► Ag/n-ZnO/p-Si/Al heterojunction diode was grown via sol–gel technique. ► The characterization of ZnO material was investigated. ► The heterojunction structure showed a rectification behavior. ► Ideality factor and barrier height were found to be 2.03 and 0.71eV, respectively. Polycrystalline ZnO t...

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Bibliographic Details
Published in:Journal of alloys and compounds 2013-02, Vol.550, p.129-132
Main Authors: Keskenler, E.F., Tomakin, M., Doğan, S., Turgut, G., Aydın, S., Duman, S., Gürbulak, B.
Format: Article
Language:English
Subjects:
Ag/n-ZnO/p-Si/Al heterojunction
Aluminum
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Contact resistance, contact potential
Diode
Diodes
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in interface structures
Exact sciences and technology
Heterojunctions
Ideality factor
Physics
Scanning electron microscopy
Silver
Sol–gel
Texture
Zinc oxide
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Summary:► Ag/n-ZnO/p-Si/Al heterojunction diode was grown via sol–gel technique. ► The characterization of ZnO material was investigated. ► The heterojunction structure showed a rectification behavior. ► Ideality factor and barrier height were found to be 2.03 and 0.71eV, respectively. Polycrystalline ZnO thin film was obtained on the p-Si for the heterojunction diode fabrication by sol–gel method. X-ray diffraction study showed that the texture of the film is hexagonal with a strong (002) preferred direction. Scanning electron microscope image of ZnO showed that the obtained ZnO thin films had more porous character. High purity vacuum evaporated silver (Ag) and aluminum (Al) metals were used to make Ohmic contacts to the n-ZnO/p-Si heterojunction structure. The electrical properties of Ag/n-ZnO/p-Si/Al diode were investigated by using current–voltage measurements. Ag/n-ZnO/p-Si/Al heterojunction diode showed a rectification behavior, and its ideality factor and barrier height values were found to be 2.03 and 0.71eV by applying a thermionic emission theory, respectively. The values of series resistance from dV/d (lnI) versus I and H(I) versus I curves were found to be 42.1 and 198.3Ω, respectively.
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2012.09.131