Quantum confinement effect on trilayer graphene nanoribbon carrier concentration

In this study, one-dimensional vision of carrier movement based on the band structure of trilayer graphene nanoribbon in the presence of a perpendicular electric field is employed. An analytical model of ABA-stacked trilayer graphene nanoribbon carrier statistics as a fundamental parameter of field...

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Bibliographic Details
Published in:Journal of experimental nanoscience 2014-01, Vol.9 (1), p.51-63
Main Authors: Rahmani, Meisam, Ismail, Razali, Ahmadi, M.T., Ghadiry, M.H.
Format: Article
Language:English
Subjects:
ABA-stacked
carrier concentration
Carrier density
degenerate limit
Fermi level
Fermi surfaces
Graphene
Mathematical analysis
Mathematical models
Nanocomposites
Nanomaterials
Nanostructure
non-degenerate limit
trilayer graphene nanoribbon
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Summary:In this study, one-dimensional vision of carrier movement based on the band structure of trilayer graphene nanoribbon in the presence of a perpendicular electric field is employed. An analytical model of ABA-stacked trilayer graphene nanoribbon carrier statistics as a fundamental parameter of field effect transistor (FET) in corporation with a numerical solution is presented in the degenerate and non-degenerate limits. The simulated results based on the presented model indicate that the model can be approximated by degenerate and non-degenerate approximations in some numbers of normalised Fermi energy. Analytical model specifies that carrier concentration in degenerate limit is strongly independent of normalised Fermi energy; however, in the non-degenerate limit, it is a strong function of normalised Fermi energy. The proposed model is then compared with other types of graphene. As a result, the developed model can assist in comprehending experiments involving trilayer graphene nanoribbon FET-based devices.
ISSN:1745-8080
1745-8099
DOI:10.1080/17458080.2013.794309