The Influence of Oxygen/Argon Ratio on the Structure and Surface Morphology of GaBa2Cu3O7- Delta d Films Deposited by RF Magnetic Sputtering

GaBa2Cu3O7-dGaBa2Cu3O7- thin films have been grown on CeO2 cap layer by RF magnetic sputtering with different oxygen/argon partial pressure ratio from 2:1 to 1:5. The CeO2 cap layers were fabricated by pulse laser deposition (PLD) on YSZ/CeO2/Ni-5%W alloy substrate and had good properties in structu...

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Bibliographic Details
Published in:Journal of superconductivity and novel magnetism 2012-08, Vol.25 (6), p.1641-1645
Main Authors: Zhu, Peng, Liu, Linfei, Zhu, Shengping, Xiao, Guina, Wang, Ying, Li, Yijie
Format: Article
Language:English
Subjects:
Argon
Deposition
Morphology
Partial pressure
Radio frequencies
Scanning electron microscopy
Sputtering
Texture
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Summary:GaBa2Cu3O7-dGaBa2Cu3O7- thin films have been grown on CeO2 cap layer by RF magnetic sputtering with different oxygen/argon partial pressure ratio from 2:1 to 1:5. The CeO2 cap layers were fabricated by pulse laser deposition (PLD) on YSZ/CeO2/Ni-5%W alloy substrate and had good properties in structure and surface morphology. We study the relationship between oxygen/argon ratio and the performance of the GaBa2Cu3O7-dGaBa2Cu3O7- film in order to find out the optimized deposition condition. The structure and surface morphology of the GaBa2Cu3O7-dGaBa2Cu3O7- thin films were measured by X-ray diffraction (XRD), Field emission scanning electron microscope (FE-SEM), Atomic force microscopy (AFM). It was found that the texture and surface performance of GaBa2Cu3O7-dGaBa2Cu3O7- film, such as growth orientation, grain roughness, grain size and surface morphology, are deeply affected by the oxygen/argon ratio. And the film's performance was the best when the oxygen/argon partial pressure ratio is 1:1.
ISSN:1557-1939
DOI:10.1007/s10948-012-1494-4