Interface and oxide quality of CoFeB/MgO/Si tunnel junctions

CoFeB/MgO/Si MOS capacitors were characterized to study the oxide and interface quality of very thin MgO layer (

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Bibliographic Details
Published in:Journal of applied physics 2012-05, Vol.111 (9), p.093908-093908-5
Main Authors: Shaw, Jonathan T., Tseng, H. W., Rajwade, Shantanu, Tung, Lieh-Ting, Buhrman, R. A., Kan, Edwin C.
Format: Article
Language:English
Subjects:
Annealing
Capping
Density
Durability
Endurance
Magnesium oxide
Oxides
Tunneling
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Description
Summary:CoFeB/MgO/Si MOS capacitors were characterized to study the oxide and interface quality of very thin MgO layer (
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4709766