Radio-frequency and low noise characteristics of SOI technology on plastic for flexible electronics

► We propose a method to fabricate high performance flexible electronics from mature SOI-CMOS technology. ► The method relies on removal of the initial rigid substrate and transfer-bonding onto a flexible foil. ► Record static, high frequency, and noise performance is demonstrated on both n- and p-M...

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Bibliographic Details
Published in:Solid-state electronics 2013-12, Vol.90, p.73-78
Main Authors: Lecavelier des Etangs-Levallois, A., Lesecq, M., Danneville, F., Tagro, Y., Lepilliet, S., Hoel, V., Troadec, D., Gloria, D., Raynaud, C., Dubois, E.
Format: Article
Language:English
Subjects:
Applied sciences
CMOS
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Flexible electronics
Gain
High frequencies
Integrated circuits
Low noise
Microwave and submillimeter wave devices, electron transfer devices
Millimetre waves
Noise
Noise levels
Oscillations
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
SOI technology
Transistors
Ultrathin chips
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Summary:► We propose a method to fabricate high performance flexible electronics from mature SOI-CMOS technology. ► The method relies on removal of the initial rigid substrate and transfer-bonding onto a flexible foil. ► Record static, high frequency, and noise performance is demonstrated on both n- and p-MOSFETs. ► Invariant RF properties pave the way to more complex RF integrated functions on flexible foil. In this work, we report on the HF performance and noise characteristics of 65nm SOI-CMOS technology transferred onto plastic films. After transfer-bonding onto a thin flexible substrate, RF-SOI-MOSFETs are shown to feature high unity-current-gain cutoff and maximum oscillation frequencies fT/fMAX amounting to 150/160GHz for n-type and 100/130GHz for p-type, respectively. Minimal noise figure and associated gain NFmin/Gass of 0.57dB/17.8dB and 0.57dB/17.0dB are measured at 10GHz for n- and p-MOSFETs, respectively.
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2013.02.049