Solution phase van der Waals epitaxy of ZnO wire arrays

As an incommensurate epitaxy, van der Waals epitaxy allows defect-free crystals to grow on substrates even with a large lattice mismatch. Furthermore, van der Waals epitaxy is proposed as a universal platform where heteroepitaxy can be achieved irrespective of the nature of the overlayer material an...

Full description

Saved in:
Bibliographic Details
Published in:Nanoscale 2013-08, Vol.5 (16), p.7242-7249
Main Authors: Zhu, Yue, Zhou, Yong, Utama, Muhammad Iqbal Bakti, de la Mata, María, Zhao, Yanyuan, Zhang, Qing, Peng, Bo, Magen, Cesar, Arbiol, Jordi, Xiong, Qihua
Format: Article
Language:English
Subjects:
Arrays
Catalysts
Crystal lattices
Epitaxy
Nanostructure
Synthesis
Wire
Zinc oxide
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:As an incommensurate epitaxy, van der Waals epitaxy allows defect-free crystals to grow on substrates even with a large lattice mismatch. Furthermore, van der Waals epitaxy is proposed as a universal platform where heteroepitaxy can be achieved irrespective of the nature of the overlayer material and the method of crystallization. Here we demonstrate van der Waals epitaxy in solution phase synthesis for seedless and catalyst-free growth of ZnO wire arrays on phlogopite mica at low temperature. A unique incommensurate interface is observed even with the incomplete initial wetting of ZnO onto the substrate. Interestingly, the imperfect contacting layer does not affect the crystalline and optical properties of other parts of the wires. In addition, we present patterned growth of a well-ordered array with hexagonal facets and in-plane alignment. We expect our seedless and catalyst-free solution phase van der Waals epitaxy synthesis to be widely applicable in other materials and structures.
ISSN:2040-3364
2040-3372
DOI:10.1039/c3nr01984e