Resistive switching characteristics of TiN/MnO2/Pt memory devices

• Published in: Physica status solidi. PSS-RRL. Rapid research letters 2010-09, Vol.4 (8-9), p.233-235
• Main Authors: Yang, Min Kyu, Park, Jae-Wan, Ko, Tae Kuk, Lee, Jeon-kook
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Conduction; Data storage; Devices; Electrodes; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in interface structures; Exact sciences and technology; Memory devices; MnO2; Physics; Platinum; resistive switching; Switching; Tin; transition metal oxides
• ISSN: 1862-6254; 1862-6270; 1862-6270
• DOI: 10.1002/pssr.201004213

Bipolar resistive switching memory devices with a TiN/MnO2/Pt structure were investigated in a low power operation (250 μA/±0.6 V). The devices showed good endurance of 105 cycles at a 1 μs pulse and reliable data retention at both RT and 125 °C. Moreover, the benefits of a high device yield and potential multilevel storage make them promising devices in next generation nonvolatile memory applications. The cell area dependency suggests that the conducting mechanism in the low resistance states is due to the formation of locally conducting filaments. The results demonstrate the feasibility of high performance resistive switching memory devices based on transition metal oxides by using TiN as the top electrode. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) This letter reports the fabrication of TiN/MnO2/Pt memory devices with the aim to optimize switching characteristics such as reset current, switching voltage and switching uniformity. In addition, excellent bipolar resistive switching behavior, such as good cycling endurance properties and retention, were observed. This is attributed to the oxygen reservoir effect of the TiN electrode on the distribution of nonlattice oxygen ions and vacancies in the devices.