Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition

Strain relaxation mechanisms were investigated in epitaxial AlN layers deposited on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition. It was revealed that epitaxial AlN layers under tensile strain can exhibit micro-cracks and nano-pits. A correlation existed between the amoun...

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Published in:Applied physics letters 2013-02, Vol.102 (6)
Main Authors: Bryan, I, Rice, A, Hussey, L, Bryan, Z, Bobea, M, Mita, S, Xie, J, Kirste, R, Collazo, R, Sitar, Z
Format: Article
Language:English
Subjects:
Aluminum nitride
Deposition
Metalorganic chemical vapor deposition
Nanocomposites
Nanomaterials
Nanostructure
Strain
Strain relaxation
Thin films
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container_title Applied physics letters
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description Strain relaxation mechanisms were investigated in epitaxial AlN layers deposited on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition. It was revealed that epitaxial AlN layers under tensile strain can exhibit micro-cracks and nano-pits. A correlation existed between the amount of strain and number of pits in localized areas. Pit densities as high as 1010 cm-2 were observed in areas where the tensile strain reached similar to 0.4%, while unstrained areas of the film showed step flow growth. These nano-pits occurred as a strain relaxation mechanism and were not related to intrinsic defects, such as threading dislocations or inversion domains.
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subjects Aluminum nitride
Deposition
Metalorganic chemical vapor deposition
Nanocomposites
Nanomaterials
Nanostructure
Strain
Strain relaxation
Thin films
title Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition
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