Design of Low Write-Power Consumption SRAM Cell Based on CNTFET at 32nm Technology

The SRAM which functions as the cache for system-on-chip is vital in the electronic industry. Carbon Nanotube Field Effect Transistor (CNFET) is used for high performance, high stability and low-power circuit designs as an alternative material to silicon in recent years. Therefore Design of SRAM Cel...

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Bibliographic Details
Published in:International journal of VLSI design & communication systems 2011-12, Vol.2 (4), p.167-177
Main Author: Rajendra Prasad, S
Format: Article
Language:English
Subjects:
Capacitance
Circuit design
Communication systems
Design engineering
Electric potential
Electronics
Semiconductor devices
Static random access memory
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Summary:The SRAM which functions as the cache for system-on-chip is vital in the electronic industry. Carbon Nanotube Field Effect Transistor (CNFET) is used for high performance, high stability and low-power circuit designs as an alternative material to silicon in recent years. Therefore Design of SRAM Cell based on CNTFET is important for Low-power cache memory. In cells, the bit-lines are the most power consuming components because of larger power dissipation in driving long bit-line with large capacitance. The cache write consumes considerable large power due to full voltage swing on the bit-line. This Paper proposes a novel 7T SRAM cell based on CNTFET that only depends on one of bit lines for Write operation and reduce the write-power consumption. The read cycle also improved because of careful transistor sizing. HSPICE simulations of this circuit using Stanford CNFET model shows that 37.2% write power saving, read cycle improvement of 38.6%.
ISSN:0976-1357
0976-1527
0976-1357
DOI:10.5121/vlsic.2011.2414