High magnetoresistance in graphene nanoribbon heterojunction

We show a large magnetoresistance (MR) effect in a graphene heterostructure consisting of a metallic and semiconductor-type armchair-graphene-nanoribbon. In the heterostructure, the transmission across the first subband of the semiconducting armchair-graphene-nanoribbon and metallic armchair-graphen...

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Bibliographic Details
Published in:Applied physics letters 2012-10, Vol.101 (18)
Main Authors: Bala Kumar, S., Jalil, M. B. A., Tan, S. G.
Format: Article
Language:English
Subjects:
Graphene
Heterojunctions
Heterostructures
Magnetoresistance
Magnetoresistivity
Mathematical analysis
Nanostructure
Wavefunctions
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Summary:We show a large magnetoresistance (MR) effect in a graphene heterostructure consisting of a metallic and semiconductor-type armchair-graphene-nanoribbon. In the heterostructure, the transmission across the first subband of the semiconducting armchair-graphene-nanoribbon and metallic armchair-graphene-nanoribbon is forbidden under zero magnetic-field, due to the orthogonality of the wavefunctions. A finite magnetic-field introduces the quantum hall-like effect, which distorts the wavefunctions. Thus, a finite transmission occurs across the heterojunction, giving rise to a large MR effect. We study the dependence of this MR on temperature and electron energy. Finally, we design a magnetic-field-effect-transistor which yields a MR of close to 100% (85%) at low (room) temperature.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4765364