Solution-based silk fibroin dielectric in n-type C60 organic field-effect transistors: Mobility enhancement by the pentacene interlayer

A pentacene interlayer of 2 nm thick is inserted between fullerene (C60) and the solution-based silk fibroin dielectric in C60 organic field-effect transistors (OFETs). The pentacene interlayer assists to improve crystal quality of the C60 layer, leading to the increase of field-effect mobility (μFE...

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Bibliographic Details
Published in:Applied physics letters 2013-12, Vol.103 (23)
Main Authors: Tsai, Li-Shiuan, Hwang, Jenn-Chang, Lee, Chun-Yi, Lin, Yi-Ting, Tsai, Cheng-Lun, Chang, Ting-Hao, Chueh, Yu-Lun, Meng, Hsin-Fei
Format: Article
Language:English
Subjects:
Applied physics
Buckminsterfullerene
Dielectrics
Field effect transistors
Fullerenes
Interlayers
Ions
Pentacene
Relative humidity
Semiconductor devices
Silk
Silk fibroin
Transistors
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Summary:A pentacene interlayer of 2 nm thick is inserted between fullerene (C60) and the solution-based silk fibroin dielectric in C60 organic field-effect transistors (OFETs). The pentacene interlayer assists to improve crystal quality of the C60 layer, leading to the increase of field-effect mobility (μFE) from 0.014 to 1 cm2 V−1 s−1 in vacuum. The μFE value of the C60 OFET is further enhanced to 10 cm2 V−1 s−1 when the OFET is exposed to air in a relative humidity of 55%. Generation of mobile and immobile charged ions in solution-based silk fibroin in air ambient is proposed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4841595