Electrical transport properties of isolated carbon nanotube/Si heterojunction Schottky diodes

A detailed study of the electrical transport properties of Pd contacted carbon nanotube (CNT)/Si heterojunctions is presented. The CNT with a diameter ranging from 1.2 to 2.0 nm on n-type Si substrates showed rectifying behavior with the ideality factor of 1.1–2.2 and turn on voltage of 0.05–0.34 V....

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Bibliographic Details
Published in:Applied physics letters 2013-11, Vol.103 (19)
Main Authors: Uchino, T., Shimpo, F., Kawashima, T., Ayre, G. N., Smith, D. C., de Groot, C. H., Ashburn, P.
Format: Article
Language:English
Subjects:
Applied physics
Carbon nanotubes
Current voltage characteristics
Diodes
Heterojunctions
Palladium
Schottky diodes
Silicon
Silicon substrates
Thermionic emission
Transport properties
Voltage
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Summary:A detailed study of the electrical transport properties of Pd contacted carbon nanotube (CNT)/Si heterojunctions is presented. The CNT with a diameter ranging from 1.2 to 2.0 nm on n-type Si substrates showed rectifying behavior with the ideality factor of 1.1–2.2 and turn on voltage of 0.05–0.34 V. The current-voltage characteristics of the CNT/n+-Si diodes were investigated in the temperature range from 50 to 300 K. The transition from thermionic emission to tunneling process was seen in the forward current around 150 K and the Schottky barrier height at Pd/CNT interface is estimated to be 0.3–0.5 eV.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4829155