Layer-Resolved Graphene Transfer via Engineered Strain Layers

• Published in: Science (American Association for the Advancement of Science) 2013-11, Vol.342 (6160), p.833-836
• Main Authors: Kim, Jeehwan, Park, Hongsik, Hannon, James B., Bedell, Stephen W., Fogel, Keith, Sadana, Devendra K., Dimitrakopoulos, Christos
• Format: Article
• Language: English
• Subjects: Applied sciences; Binding energy; Condensed matter: structure, mechanical and thermal properties; Crystal surfaces; Crystals; Electronics; Exact sciences and technology; Exfoliation; Graphene; Material films; Materials; Materials science; Monolayers; Physics; Raman scattering; Residual stress; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Semiconductor wafers; Silicon carbide; Silicon substrates; Stripes; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Transistors
• ISSN: 0036-8075; 1095-9203
• DOI: 10.1126/science.1242988

The performance of optimized graphene devices is ultimately determined by the quality of the graphene itself. Graphene grown on copper foils is often wrinkled, and the orientation of the graphene cannot be controlled. Graphene grown on SiC(0001) via the decomposition of the surface has a single orientation, but its thickness cannot be easily limited to one layer. We describe a method in which a graphene film of one or two monolayers grown on SiC is exfoliated via the stress induced with a Ni film and transferred to another substrate. The excess graphene is selectively removed with a second exfoliation process with a Au film, resulting in a monolayer graphene film that is continuous and single-oriented.