Thin Films of Magnetically Doped Topological Insulator with Carrier-Independent Long-Range Ferromagnetic Order

Thin films of magnetically doped topological insulators Cr0.22(BixSb1‐x)1.78Te3 are found to possess carrier‐independent long‐range ferromagnetic order with perpendicular magnetic anisotropy. The anomalous Hall resistance is greatly enhanced, up to one quarter of quantum Hall resistance, by depletio...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2013-02, Vol.25 (7), p.1065-1070
Main Authors: Chang, Cui-Zu, Zhang, Jinsong, Liu, Minhao, Zhang, Zuocheng, Feng, Xiao, Li, Kang, Wang, Li-Li, Chen, Xi, Dai, Xi, Fang, Zhong, Qi, Xiao-Liang, Zhang, Shou-Cheng, Wang, Yayu, He, Ke, Ma, Xu-Cun, Xue, Qi-Kun
Format: Article
Language:English
Subjects:
anomalous hall effect
Carriers
Depletion
ferromagnetic insulator
Ferromagnetic materials
field effect
Hall effect
Insulators
Magnetic anisotropy
molecular beam epitaxy
Thin films
topological insulator
Topology
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Summary:Thin films of magnetically doped topological insulators Cr0.22(BixSb1‐x)1.78Te3 are found to possess carrier‐independent long‐range ferromagnetic order with perpendicular magnetic anisotropy. The anomalous Hall resistance is greatly enhanced, up to one quarter of quantum Hall resistance, by depletion of the carriers. The results demonstrate this material as a promising system to realize the quantized anomalous Hall effect.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201203493