Fabrication of low-density self-assembled InAs quantum dots on InP(311)B substrate by molecular beam epitaxy

• Published in: Journal of crystal growth 2013-09, Vol.378, p.450-453
• Main Authors: Akahane, Kouichi, Yamamoto, Naokatsu
• Format: Article
• Language: English
• Subjects: A1. Nanostructures; A3. Molecular beam epitaxy; B2. Semiconducting III–V materials; Band spectra; Cross-disciplinary physics: materials science; rheology; Crystal growth; Density; Exact sciences and technology; Fiber optics; Indium arsenides; Materials science; Mesas; Methods of deposition of films and coatings; film growth and epitaxy; Methods of nanofabrication; Molecular, atomic, ion, and chemical beam epitaxy; Nanoscale materials and structures: fabrication and characterization; Optical fibers; Other topics in nanoscale materials and structures; Physics; Quantum dots; Self-assembly
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2012.12.174

We developed a method of fabricating low-density InAs self-assembled quantum dots (QDs) on InP(311)B substrates by controlling the substrate temperature, and it was found that the lateral size and height of the InAs QDs increased with increasing substrate temperature. The density of the InAs QDs decreased to 1.28×1010/cm2, which corresponded to one QD per mesa structure, with a diameter of 100nm. The photoluminescence (PL) property was also investigated, and it showed a clear spectrum even at room temperature at a 1.55μm fiber-optic communications system band. A blueshift of the PL peak wavelength was observed as the size of the InAs QDs increased. This unusual PL property can be explained by In segregation and In re-evaporation at relatively high growth temperature. ► The low density of self-assembled QDs were grown on InP(311)B substrate by molecular beam epitaxy. ► Fabricated InAs QDs showed photoluminescence at 1.55 μm region which is suitable for fiber optica communications systems. ► Unusual blueshift of the PL peak wavelength was observed as the size of the InAs QDs increased.