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Effect of Dielectric Behavior of Gate Dielectric Polymers on Memory Characteristics of Organic Field-effect Transistors
Memory characteristics of organic field-effect transistors (OFETs) fabricated using poly(γ-methyl-L-glutamate) (PMLG) and poly(ε-benzyloxycarbonyl-L-lysine) [PLys(z)] as gate dielectrics are investigated. The origin of difference in the memory retention property in the transfer characteristics of th...
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Published in: | Journal of Photopolymer Science and Technology 2014/07/08, Vol.27(3), pp.333-337 |
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container_end_page | 337 |
container_issue | 3 |
container_start_page | 333 |
container_title | Journal of Photopolymer Science and Technology |
container_volume | 27 |
creator | Sakai, Heisuke Cheong, Hae-Jeong Kodzasa, Takehito Tokuhisa, Hideo Tokoro, Kazuhiko Yoshida, Manabu Ikoga, Taihei Nakamura, Kazuki Kobayashi, Norihisa Uemura, Sei |
description | Memory characteristics of organic field-effect transistors (OFETs) fabricated using poly(γ-methyl-L-glutamate) (PMLG) and poly(ε-benzyloxycarbonyl-L-lysine) [PLys(z)] as gate dielectrics are investigated. The origin of difference in the memory retention property in the transfer characteristics of the OFETs is investigated by thermally stimulated depolarized current (TSDC) and dielectric spectra measurements for the PLys(z) and PMLG films. TSDC measurements reveal that the depolarization of the PLys(z) film is mainly dominated by a single relaxation process around room temperature, but that of the PMLG film is not dominated by a relaxation process. Further, the PLys(z) film shows dielectric dispersion near room temperature, but the PMLG film does not show any dispersion. This causes difference in the electric characteristics of OFETs. |
doi_str_mv | 10.2494/photopolymer.27.333 |
format | article |
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The origin of difference in the memory retention property in the transfer characteristics of the OFETs is investigated by thermally stimulated depolarized current (TSDC) and dielectric spectra measurements for the PLys(z) and PMLG films. TSDC measurements reveal that the depolarization of the PLys(z) film is mainly dominated by a single relaxation process around room temperature, but that of the PMLG film is not dominated by a relaxation process. Further, the PLys(z) film shows dielectric dispersion near room temperature, but the PMLG film does not show any dispersion. This causes difference in the electric characteristics of OFETs.</description><identifier>ISSN: 0914-9244</identifier><identifier>EISSN: 1349-6336</identifier><identifier>DOI: 10.2494/photopolymer.27.333</identifier><language>eng</language><publisher>Hiratsuka: The Society of Photopolymer Science and Technology(SPST)</publisher><subject>Depolarization ; dielectric dispersion ; Dielectrics ; Dispersions ; Field effect transistors ; Gates ; Organic transistor memory ; Polymers ; polypeptide ; Semiconductor devices ; Spectra ; thermally stimulated depolarized current (TSDC)</subject><ispartof>Journal of Photopolymer Science and Technology, 2014/07/08, Vol.27(3), pp.333-337</ispartof><rights>2014 The Society of Photopolymer Science and Technology (SPST)</rights><rights>Copyright Japan Science and Technology Agency 2014</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c568t-b29d94f4ec73830a574f613b3787c998113d5bb82bda10e60e0de1df849123793</citedby><cites>FETCH-LOGICAL-c568t-b29d94f4ec73830a574f613b3787c998113d5bb82bda10e60e0de1df849123793</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Sakai, Heisuke</creatorcontrib><creatorcontrib>Cheong, Hae-Jeong</creatorcontrib><creatorcontrib>Kodzasa, Takehito</creatorcontrib><creatorcontrib>Tokuhisa, Hideo</creatorcontrib><creatorcontrib>Tokoro, Kazuhiko</creatorcontrib><creatorcontrib>Yoshida, Manabu</creatorcontrib><creatorcontrib>Ikoga, Taihei</creatorcontrib><creatorcontrib>Nakamura, Kazuki</creatorcontrib><creatorcontrib>Kobayashi, Norihisa</creatorcontrib><creatorcontrib>Uemura, Sei</creatorcontrib><title>Effect of Dielectric Behavior of Gate Dielectric Polymers on Memory Characteristics of Organic Field-effect Transistors</title><title>Journal of Photopolymer Science and Technology</title><addtitle>J. Photopol. Sci. Technol.</addtitle><description>Memory characteristics of organic field-effect transistors (OFETs) fabricated using poly(γ-methyl-L-glutamate) (PMLG) and poly(ε-benzyloxycarbonyl-L-lysine) [PLys(z)] as gate dielectrics are investigated. The origin of difference in the memory retention property in the transfer characteristics of the OFETs is investigated by thermally stimulated depolarized current (TSDC) and dielectric spectra measurements for the PLys(z) and PMLG films. TSDC measurements reveal that the depolarization of the PLys(z) film is mainly dominated by a single relaxation process around room temperature, but that of the PMLG film is not dominated by a relaxation process. Further, the PLys(z) film shows dielectric dispersion near room temperature, but the PMLG film does not show any dispersion. This causes difference in the electric characteristics of OFETs.</description><subject>Depolarization</subject><subject>dielectric dispersion</subject><subject>Dielectrics</subject><subject>Dispersions</subject><subject>Field effect transistors</subject><subject>Gates</subject><subject>Organic transistor memory</subject><subject>Polymers</subject><subject>polypeptide</subject><subject>Semiconductor devices</subject><subject>Spectra</subject><subject>thermally stimulated depolarized current (TSDC)</subject><issn>0914-9244</issn><issn>1349-6336</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNplkT1PwzAQhi0EEuXjF7BEYmFJsXOOHY9QWkAClaHMluNcaKo0LnYK6r_HVRBCMNnyPY_vdC8hF4yOM6749Wbperdx7W6NfpzJMQAckBEDrlIBIA7JiCrGU5VxfkxOQlhRCpDnakQ-p3WNtk9cndw12Marb2xyi0vz0Ti_f743Pf6uvQxtQuK65BnXzu-SydJ4Y3v0TegbG_bW3L-ZLtKzKFYpDk0W3nQhMs6HM3JUmzbg-fd5Sl5n08XkIX2a3z9Obp5Sm4uiT8tMVYrXHK2EAqjJJa8FgxJkIa1SBWNQ5WVZZGVlGEVBkVbIqrrgimUgFZySq-HfjXfvWwy9XjfBYtuaDt02aCYky7lQikf08g-6clvfxek0ywWFTFIlIgUDZb0LwWOtN75ZG7_TjOp9GPp3GDqTOoYRrdlgrUJv3vDHMT4urMX_zrf4A9i4Yo0dfAG9e5w9</recordid><startdate>20140101</startdate><enddate>20140101</enddate><creator>Sakai, Heisuke</creator><creator>Cheong, Hae-Jeong</creator><creator>Kodzasa, Takehito</creator><creator>Tokuhisa, Hideo</creator><creator>Tokoro, Kazuhiko</creator><creator>Yoshida, Manabu</creator><creator>Ikoga, Taihei</creator><creator>Nakamura, Kazuki</creator><creator>Kobayashi, Norihisa</creator><creator>Uemura, Sei</creator><general>The Society of Photopolymer Science and Technology(SPST)</general><general>Japan Science and Technology Agency</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20140101</creationdate><title>Effect of Dielectric Behavior of Gate Dielectric Polymers on Memory Characteristics of Organic Field-effect Transistors</title><author>Sakai, Heisuke ; Cheong, Hae-Jeong ; Kodzasa, Takehito ; Tokuhisa, Hideo ; Tokoro, Kazuhiko ; Yoshida, Manabu ; Ikoga, Taihei ; Nakamura, Kazuki ; Kobayashi, Norihisa ; Uemura, Sei</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c568t-b29d94f4ec73830a574f613b3787c998113d5bb82bda10e60e0de1df849123793</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Depolarization</topic><topic>dielectric dispersion</topic><topic>Dielectrics</topic><topic>Dispersions</topic><topic>Field effect transistors</topic><topic>Gates</topic><topic>Organic transistor memory</topic><topic>Polymers</topic><topic>polypeptide</topic><topic>Semiconductor devices</topic><topic>Spectra</topic><topic>thermally stimulated depolarized current (TSDC)</topic><toplevel>online_resources</toplevel><creatorcontrib>Sakai, Heisuke</creatorcontrib><creatorcontrib>Cheong, Hae-Jeong</creatorcontrib><creatorcontrib>Kodzasa, Takehito</creatorcontrib><creatorcontrib>Tokuhisa, Hideo</creatorcontrib><creatorcontrib>Tokoro, Kazuhiko</creatorcontrib><creatorcontrib>Yoshida, Manabu</creatorcontrib><creatorcontrib>Ikoga, Taihei</creatorcontrib><creatorcontrib>Nakamura, Kazuki</creatorcontrib><creatorcontrib>Kobayashi, Norihisa</creatorcontrib><creatorcontrib>Uemura, Sei</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of Photopolymer Science and Technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sakai, Heisuke</au><au>Cheong, Hae-Jeong</au><au>Kodzasa, Takehito</au><au>Tokuhisa, Hideo</au><au>Tokoro, Kazuhiko</au><au>Yoshida, Manabu</au><au>Ikoga, Taihei</au><au>Nakamura, Kazuki</au><au>Kobayashi, Norihisa</au><au>Uemura, Sei</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of Dielectric Behavior of Gate Dielectric Polymers on Memory Characteristics of Organic Field-effect Transistors</atitle><jtitle>Journal of Photopolymer Science and Technology</jtitle><addtitle>J. Photopol. Sci. Technol.</addtitle><date>2014-01-01</date><risdate>2014</risdate><volume>27</volume><issue>3</issue><spage>333</spage><epage>337</epage><pages>333-337</pages><issn>0914-9244</issn><eissn>1349-6336</eissn><abstract>Memory characteristics of organic field-effect transistors (OFETs) fabricated using poly(γ-methyl-L-glutamate) (PMLG) and poly(ε-benzyloxycarbonyl-L-lysine) [PLys(z)] as gate dielectrics are investigated. The origin of difference in the memory retention property in the transfer characteristics of the OFETs is investigated by thermally stimulated depolarized current (TSDC) and dielectric spectra measurements for the PLys(z) and PMLG films. TSDC measurements reveal that the depolarization of the PLys(z) film is mainly dominated by a single relaxation process around room temperature, but that of the PMLG film is not dominated by a relaxation process. Further, the PLys(z) film shows dielectric dispersion near room temperature, but the PMLG film does not show any dispersion. This causes difference in the electric characteristics of OFETs.</abstract><cop>Hiratsuka</cop><pub>The Society of Photopolymer Science and Technology(SPST)</pub><doi>10.2494/photopolymer.27.333</doi><tpages>5</tpages><oa>free_for_read</oa></addata></record> |
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subjects | Depolarization dielectric dispersion Dielectrics Dispersions Field effect transistors Gates Organic transistor memory Polymers polypeptide Semiconductor devices Spectra thermally stimulated depolarized current (TSDC) |
title | Effect of Dielectric Behavior of Gate Dielectric Polymers on Memory Characteristics of Organic Field-effect Transistors |
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