RF-MBE growth of cubic InN nano-scale dots on cubic GaN

• Published in: Journal of crystal growth 2013-09, Vol.378, p.454-458
• Main Authors: Suzuki, Junichiro, Orihara, Misao, Yagi, Shuhei, Hijikata, Yasuto, Yaguchi, Hiroyuki
• Format: Article
• Language: English
• Subjects: A1. Nanostructures; A3. Molecular beam epitaxy; Atomic force microscopy; B1. Nitrides; B2. Semiconducting indium compounds; Cross-disciplinary physics: materials science; rheology; Cubic lattice; Density; Exact sciences and technology; Flux; Gallium nitrides; Materials science; Methods of crystal growth; physics of crystal growth; Methods of deposition of films and coatings; film growth and epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Nanocomposites; Nanomaterials; Nanostructure; Physics; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2012.12.050

This paper reports the first successful growth and structural control of cubic InN (c-InN) nano-scale dots. The samples were grown on MgO (001) substrates by RF-N2 plasma molecular beam epitaxy (RF-MBE). Cubic GaN (c-GaN) underlayers with a thickness of 500nm were grown on the substrates followed by the growth of a few nm-thick InN under various conditions. The formation of InN dots aligned along the 〈110〉 directions were confirmed by atomic force microscopy (AFM). X-ray diffraction (XRD) measurements suggested the cubic zincblende lattice structure of the obtained InN dots. The area density and size of c-InN dots were well controlled by adjusting the growth conditions such as the substrate temperature and the In flux, and a very high dot density of 2.2×1011cm−2 was successfully obtained at a growth temperature of 470°C and an In flux of 7.0×10−5Pa. ► We have successfully grown cubic InN nano-scale dots on cubic GaN underlayers. ► The samples were grown by RF-N2 molecular beam epitaxy on MgO substrates. ► Obtained c-InN dots showed a tendency to align along the 〈110〉 directions. ► The density and size of dots were well controlled by varying the growth conditions.