GaN growth on Si pillar arrays by metalorganic chemical vapor deposition

• Published in: Journal of crystal growth 2013-05, Vol.370, p.259-264
• Main Authors: Won, Dongjin, Weng, Xiaojun, Yuwen, Yu A., Ke, Yue, Kendrick, Chito, Shen, Haoting, Mayer, Theresa S., Redwing, Joan M.
• Format: Article
• Language: English
• Subjects: A3. Metalorganic chemical vapor deposition; Arrays; B1. GaN; B1. Nitrides; B1. Si pillar arrays; B2. Semiconducting III–V materials; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Crystalline state (including molecular motions in solids); Etching and cleaning; Exact sciences and technology; Fins; Gallium nitrides; Materials science; Methods of crystal growth; physics of crystal growth; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Physics of gases, plasmas and electric discharges; Physics of plasmas and electric discharges; Pillars; Plasma applications; Roughness; Shells; Silicon; Silicon substrates; Structure of solids and liquids; crystallography; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation; Theory of crystal structure, crystal symmetry; calculations and modeling
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2012.10.004

GaN growth on high aspect ratio Si micro-pillar arrays prepared by deep reactive ion etching (DRIE) was investigated using Si(111), Si(110), Si(112), and Si(100) substrates. The sidewall roughness of the Si pillars resulting from DRIE was reduced by thermal annealing at 1100°C in H2 for 5min. Conformal AlN buffer layers were grown at 1100°C on the pillars. In contrast, GaN films grown at 1100°C were always faceted since GaN preferentially nucleated and grew on the Si{11¯0} and Si{11¯1} sidewall planes of the Si pillars. The preferential growth lead to unique symmetries for the independent GaN fins depending on pillar orientation. Lateral growth of the GaN fins at 1100°C was enhanced with increasing V/III ratio up to 22710. However, the GaN fins did not coalesce seamlessly. A lower growth temperature of 800°C gave rise to a conformal polycrystalline GaN shell. Post-annealing of the GaN shells at 1100°C in H2 for 15min after growth at 800°C induced highly textured GaN films although the GaN films became partly faceted. ► GaN growth on Si pillar arrays was investigated for the application of solar cells. ► GaN films grown at 1100°C were always faceted due to preferential growth. ► Preferential growth lead to unique symmetries of GaN fins depending on pillar orientation. ► Low growth temperature of 800°C resulted in conformal polycrystalline GaN shell. ► Post-annealing of the GaN shells at 1100°C induced highly textured GaN films.