Plasma enhanced growth of single walled carbon nanotubes at low temperature: A reactive molecular dynamics simulation

Low-temperature growth of carbon nanotubes (CNTs) has been claimed to provide a route towards chiral-selective growth, enabling a host of applications. In this contribution, we employ reactive molecular dynamics simulations to demonstrate how plasma-based deposition allows such low-temperature growt...

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Bibliographic Details
Published in:Carbon (New York) 2013-12, Vol.65, p.269-276
Main Authors: Shariat, M., Hosseini, S.I., Shokri, B., Neyts, E.C.
Format: Article
Language:English
Subjects:
Carbon
Chemical vapor deposition
Cross-disciplinary physics: materials science
rheology
Deposition
Exact sciences and technology
Fullerenes and related materials
diamonds, graphite
Ion bombardment
Materials science
Molecular dynamics
Nanoscale materials and structures: fabrication and characterization
Nanotubes
Physics
Precipitation
Simulation
Single wall carbon nanotubes
Specific materials
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Summary:Low-temperature growth of carbon nanotubes (CNTs) has been claimed to provide a route towards chiral-selective growth, enabling a host of applications. In this contribution, we employ reactive molecular dynamics simulations to demonstrate how plasma-based deposition allows such low-temperature growth. We first show how ion bombardment during the growth affects the carbon dissolution and precipitation process. We then continue to demonstrate how a narrow ion energy window allows CNT growth at 500K. Finally, we also show how CNTs in contrast cannot be grown in thermal CVD at this low temperature, but only at high temperature, in agreement with experimental data.
ISSN:0008-6223
1873-3891
DOI:10.1016/j.carbon.2013.08.025