Mechanical milled doped Zn-based semiconductors powders for photovoltaic devices

Structural characterization of nanocrystalline Al-doped ZnTe semiconductors, obtained by mechanical milling from ZnTe and Al2O3 powders, is presented. The samples were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray absorption full spectroscopy (XAFS) and positron anni...

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Bibliographic Details
Published in:International journal of hydrogen energy 2014-05, Vol.39 (16), p.8697-8701
Main Authors: Laborde, J.I., Hoya, J., Reyes Tolosa, M.D., Hernandez-Fenollosa, M.A., Damonte, L.C.
Format: Article
Language:English
Subjects:
Alternative fuels. Production and utilization
Aluminum
Applied sciences
Devices
Diffraction
Energy
Exact sciences and technology
Fuels
Hydrogen
Mechanical milling
Nanocrystalline semiconductors
Photovoltaic cells
Positron annihilation
Scanning electron microscopy
Semiconductors
X-rays
Zinc tellurides
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Summary:Structural characterization of nanocrystalline Al-doped ZnTe semiconductors, obtained by mechanical milling from ZnTe and Al2O3 powders, is presented. The samples were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray absorption full spectroscopy (XAFS) and positron annihilation lifetime (PALS) measurements. The results suggested that Al atoms are substitutional incorporated into the ZnTe cubic structure. •Mechanical milling is a simple, cheap and effective method to obtain nanostructures.•Al-doped zinc telluride powders were successfully obtained.•X-ray diffraction and XAFS studies show Al incorporation in crystalline structure.•PALS became an effective tool to sense dopant incorporation into ZnTe power.•Average positron lifetime is a good parameter to analyze changes with milling time.
ISSN:0360-3199
1879-3487
DOI:10.1016/j.ijhydene.2013.12.051