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Mechanical milled doped Zn-based semiconductors powders for photovoltaic devices
Structural characterization of nanocrystalline Al-doped ZnTe semiconductors, obtained by mechanical milling from ZnTe and Al2O3 powders, is presented. The samples were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray absorption full spectroscopy (XAFS) and positron anni...
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| Published in: | International journal of hydrogen energy 2014-05, Vol.39 (16), p.8697-8701 |
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| Main Authors: | , , , , |
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| cites | cdi_FETCH-LOGICAL-c464t-711cc55b0af8ad0d3f6e7a5609dd5a8bd5e49aa5082236d55b1b7aede4d7e9fe3 |
| container_end_page | 8701 |
| container_issue | 16 |
| container_start_page | 8697 |
| container_title | International journal of hydrogen energy |
| container_volume | 39 |
| creator | Laborde, J.I. Hoya, J. Reyes Tolosa, M.D. Hernandez-Fenollosa, M.A. Damonte, L.C. |
| description | Structural characterization of nanocrystalline Al-doped ZnTe semiconductors, obtained by mechanical milling from ZnTe and Al2O3 powders, is presented. The samples were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray absorption full spectroscopy (XAFS) and positron annihilation lifetime (PALS) measurements. The results suggested that Al atoms are substitutional incorporated into the ZnTe cubic structure.
•Mechanical milling is a simple, cheap and effective method to obtain nanostructures.•Al-doped zinc telluride powders were successfully obtained.•X-ray diffraction and XAFS studies show Al incorporation in crystalline structure.•PALS became an effective tool to sense dopant incorporation into ZnTe power.•Average positron lifetime is a good parameter to analyze changes with milling time. |
| doi_str_mv | 10.1016/j.ijhydene.2013.12.051 |
| format | article |
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•Mechanical milling is a simple, cheap and effective method to obtain nanostructures.•Al-doped zinc telluride powders were successfully obtained.•X-ray diffraction and XAFS studies show Al incorporation in crystalline structure.•PALS became an effective tool to sense dopant incorporation into ZnTe power.•Average positron lifetime is a good parameter to analyze changes with milling time.</description><identifier>ISSN: 0360-3199</identifier><identifier>EISSN: 1879-3487</identifier><identifier>DOI: 10.1016/j.ijhydene.2013.12.051</identifier><identifier>CODEN: IJHEDX</identifier><language>eng</language><publisher>Kidlington: Elsevier Ltd</publisher><subject>Alternative fuels. Production and utilization ; Aluminum ; Applied sciences ; Devices ; Diffraction ; Energy ; Exact sciences and technology ; Fuels ; Hydrogen ; Mechanical milling ; Nanocrystalline semiconductors ; Photovoltaic cells ; Positron annihilation ; Scanning electron microscopy ; Semiconductors ; X-rays ; Zinc tellurides</subject><ispartof>International journal of hydrogen energy, 2014-05, Vol.39 (16), p.8697-8701</ispartof><rights>2013 Hydrogen Energy Publications, LLC.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c464t-711cc55b0af8ad0d3f6e7a5609dd5a8bd5e49aa5082236d55b1b7aede4d7e9fe3</citedby><cites>FETCH-LOGICAL-c464t-711cc55b0af8ad0d3f6e7a5609dd5a8bd5e49aa5082236d55b1b7aede4d7e9fe3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,314,780,784,789,790,23930,23931,25140,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=28483452$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Laborde, J.I.</creatorcontrib><creatorcontrib>Hoya, J.</creatorcontrib><creatorcontrib>Reyes Tolosa, M.D.</creatorcontrib><creatorcontrib>Hernandez-Fenollosa, M.A.</creatorcontrib><creatorcontrib>Damonte, L.C.</creatorcontrib><title>Mechanical milled doped Zn-based semiconductors powders for photovoltaic devices</title><title>International journal of hydrogen energy</title><description>Structural characterization of nanocrystalline Al-doped ZnTe semiconductors, obtained by mechanical milling from ZnTe and Al2O3 powders, is presented. The samples were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray absorption full spectroscopy (XAFS) and positron annihilation lifetime (PALS) measurements. The results suggested that Al atoms are substitutional incorporated into the ZnTe cubic structure.
•Mechanical milling is a simple, cheap and effective method to obtain nanostructures.•Al-doped zinc telluride powders were successfully obtained.•X-ray diffraction and XAFS studies show Al incorporation in crystalline structure.•PALS became an effective tool to sense dopant incorporation into ZnTe power.•Average positron lifetime is a good parameter to analyze changes with milling time.</description><subject>Alternative fuels. Production and utilization</subject><subject>Aluminum</subject><subject>Applied sciences</subject><subject>Devices</subject><subject>Diffraction</subject><subject>Energy</subject><subject>Exact sciences and technology</subject><subject>Fuels</subject><subject>Hydrogen</subject><subject>Mechanical milling</subject><subject>Nanocrystalline semiconductors</subject><subject>Photovoltaic cells</subject><subject>Positron annihilation</subject><subject>Scanning electron microscopy</subject><subject>Semiconductors</subject><subject>X-rays</subject><subject>Zinc tellurides</subject><issn>0360-3199</issn><issn>1879-3487</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNqFkD1PwzAQhi0EEqXwF1AWJJYEO4k_soEqvqQiGGBhsRz7ojpK4mCnRf33uGphZbn3hufudA9ClwRnBBN202a2XW0NDJDlmBQZyTNMyRGaEcGrtCgFP0YzXDCcFqSqTtFZCC3GhOOymqG3F9ArNVituqS3XQcmMW6M9XNIaxViE6C32g1mrSfnQzK6bwMxG-eTceUmt3HdpKxODGyshnCOThrVBbg45Bx9PNy_L57S5evj8-JumeqSlVPKCdGa0hqrRiiDTdEw4IoyXBlDlagNhbJSimKR5wUzkSQ1V2CgNByqBoo5ut7vHb37WkOYZG-Dhq5TA7h1kIRxQhnlWESU7VHtXQgeGjl62yu_lQTLnULZyl-FcqdQklxGhXHw6nBDhSio8WrQNvxN56IURUnzyN3uOYgPbyx4GbSFQYOxHvQkjbP_nfoBloiMpg</recordid><startdate>20140527</startdate><enddate>20140527</enddate><creator>Laborde, J.I.</creator><creator>Hoya, J.</creator><creator>Reyes Tolosa, M.D.</creator><creator>Hernandez-Fenollosa, M.A.</creator><creator>Damonte, L.C.</creator><general>Elsevier Ltd</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7SP</scope><scope>7TB</scope><scope>7U5</scope><scope>8FD</scope><scope>FR3</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20140527</creationdate><title>Mechanical milled doped Zn-based semiconductors powders for photovoltaic devices</title><author>Laborde, J.I. ; Hoya, J. ; Reyes Tolosa, M.D. ; Hernandez-Fenollosa, M.A. ; Damonte, L.C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c464t-711cc55b0af8ad0d3f6e7a5609dd5a8bd5e49aa5082236d55b1b7aede4d7e9fe3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Alternative fuels. Production and utilization</topic><topic>Aluminum</topic><topic>Applied sciences</topic><topic>Devices</topic><topic>Diffraction</topic><topic>Energy</topic><topic>Exact sciences and technology</topic><topic>Fuels</topic><topic>Hydrogen</topic><topic>Mechanical milling</topic><topic>Nanocrystalline semiconductors</topic><topic>Photovoltaic cells</topic><topic>Positron annihilation</topic><topic>Scanning electron microscopy</topic><topic>Semiconductors</topic><topic>X-rays</topic><topic>Zinc tellurides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Laborde, J.I.</creatorcontrib><creatorcontrib>Hoya, J.</creatorcontrib><creatorcontrib>Reyes Tolosa, M.D.</creatorcontrib><creatorcontrib>Hernandez-Fenollosa, M.A.</creatorcontrib><creatorcontrib>Damonte, L.C.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>International journal of hydrogen energy</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Laborde, J.I.</au><au>Hoya, J.</au><au>Reyes Tolosa, M.D.</au><au>Hernandez-Fenollosa, M.A.</au><au>Damonte, L.C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Mechanical milled doped Zn-based semiconductors powders for photovoltaic devices</atitle><jtitle>International journal of hydrogen energy</jtitle><date>2014-05-27</date><risdate>2014</risdate><volume>39</volume><issue>16</issue><spage>8697</spage><epage>8701</epage><pages>8697-8701</pages><issn>0360-3199</issn><eissn>1879-3487</eissn><coden>IJHEDX</coden><abstract>Structural characterization of nanocrystalline Al-doped ZnTe semiconductors, obtained by mechanical milling from ZnTe and Al2O3 powders, is presented. The samples were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray absorption full spectroscopy (XAFS) and positron annihilation lifetime (PALS) measurements. The results suggested that Al atoms are substitutional incorporated into the ZnTe cubic structure.
•Mechanical milling is a simple, cheap and effective method to obtain nanostructures.•Al-doped zinc telluride powders were successfully obtained.•X-ray diffraction and XAFS studies show Al incorporation in crystalline structure.•PALS became an effective tool to sense dopant incorporation into ZnTe power.•Average positron lifetime is a good parameter to analyze changes with milling time.</abstract><cop>Kidlington</cop><pub>Elsevier Ltd</pub><doi>10.1016/j.ijhydene.2013.12.051</doi><tpages>5</tpages><oa>free_for_read</oa></addata></record> |
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| subjects | Alternative fuels. Production and utilization Aluminum Applied sciences Devices Diffraction Energy Exact sciences and technology Fuels Hydrogen Mechanical milling Nanocrystalline semiconductors Photovoltaic cells Positron annihilation Scanning electron microscopy Semiconductors X-rays Zinc tellurides |
| title | Mechanical milled doped Zn-based semiconductors powders for photovoltaic devices |
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