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The growth and conductivity of nanostructured ZnO films grown on Al-doped ZnO precursor layers by pulsed laser deposition
The structure and electrical properties of nanostructured Al-doped ZnO (AZO)/ZnO bilayers grown as potential solar cell electrodes by pulsed laser deposition on (0001) sapphire substrates are investigated. Transmission and scanning electron microscopy and X-ray diffraction show a narrow temperature...
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Published in: | Ceramics international 2014-07, Vol.40 (6), p.8389-8395 |
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description | The structure and electrical properties of nanostructured Al-doped ZnO (AZO)/ZnO bilayers grown as potential solar cell electrodes by pulsed laser deposition on (0001) sapphire substrates are investigated. Transmission and scanning electron microscopy and X-ray diffraction show a narrow temperature window around 350–450°C where nanostructures are formed. 2-D mapping of electrical conductivity by tunnelling atomic force microscopy showed that these nanostructures provided low resistance pathways, but that the overall film resistivity increased for substrate temperatures above 350°C. The reasons for this are discussed. |
doi_str_mv | 10.1016/j.ceramint.2014.01.045 |
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fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1671588572</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0272884214000716</els_id><sourcerecordid>1671588572</sourcerecordid><originalsourceid>FETCH-LOGICAL-c260t-1d2b311d5026428aeaa20d259aa796ddb2b4e09a8c045d923518eb3a71c7aeff3</originalsourceid><addsrcrecordid>eNqFkEtPwzAQhC0EEqXwF5CPXBJs532jqnhJSL2UCxfLsTfUVWoH2ynKv8el5cxppZ35djWD0C0lKSW0vN-mEpzYaRNSRmieEpqSvDhDM1pXWZI1RXmOZoRVLKnrnF2iK--3JIJNTmZoWm8Afzr7HTZYGIWlNWqUQe91mLDtsBHG-uDianSg8IdZ4U73O__LGGwNXvSJssNJGxzI0XnrcC8mcB63Ex7G3ke5Fx4cVjBYr4O25hpddCIqN6c5R-9Pj-vlS_K2en5dLt4SyUoSEqpYm1GqCsLKnNUChGBEsaIRompKpVrW5kAaUcsYWjUsK2gNbSYqKisBXZfN0d3x7uDs1wg-8J32EvpeGLCj57SsaFHXRcWitTxapbPeO-j44PROuIlTwg9d8y3_65ofuuaE8vg2gg9HEGKQvQbHvdRgJCgdCwlcWf3fiR9chI4f</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1671588572</pqid></control><display><type>article</type><title>The growth and conductivity of nanostructured ZnO films grown on Al-doped ZnO precursor layers by pulsed laser deposition</title><source>ScienceDirect Journals</source><creator>Kumarakuru, Haridas ; Cherns, David ; Collins, Andrew M.</creator><creatorcontrib>Kumarakuru, Haridas ; Cherns, David ; Collins, Andrew M.</creatorcontrib><description>The structure and electrical properties of nanostructured Al-doped ZnO (AZO)/ZnO bilayers grown as potential solar cell electrodes by pulsed laser deposition on (0001) sapphire substrates are investigated. Transmission and scanning electron microscopy and X-ray diffraction show a narrow temperature window around 350–450°C where nanostructures are formed. 2-D mapping of electrical conductivity by tunnelling atomic force microscopy showed that these nanostructures provided low resistance pathways, but that the overall film resistivity increased for substrate temperatures above 350°C. The reasons for this are discussed.</description><identifier>ISSN: 0272-8842</identifier><identifier>EISSN: 1873-3956</identifier><identifier>DOI: 10.1016/j.ceramint.2014.01.045</identifier><language>eng</language><publisher>Elsevier Ltd</publisher><subject>Al-doped ZnO (AZO) and ZnO thin films ; Aluminum ; Azo ; Electrical resistivity ; Electrodes ; Nanostructure ; Pulsed laser deposition ; Pulsed laser deposition (PLD) ; Resistivity ; Scanning electron microscopy (SEM) ; Transmission electron microscopy (TEM) ; Tunnelling atomic force microscopy (TUNA) ; Zinc oxide</subject><ispartof>Ceramics international, 2014-07, Vol.40 (6), p.8389-8395</ispartof><rights>2014 Elsevier Ltd and Techna Group S.r.l.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c260t-1d2b311d5026428aeaa20d259aa796ddb2b4e09a8c045d923518eb3a71c7aeff3</citedby><cites>FETCH-LOGICAL-c260t-1d2b311d5026428aeaa20d259aa796ddb2b4e09a8c045d923518eb3a71c7aeff3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Kumarakuru, Haridas</creatorcontrib><creatorcontrib>Cherns, David</creatorcontrib><creatorcontrib>Collins, Andrew M.</creatorcontrib><title>The growth and conductivity of nanostructured ZnO films grown on Al-doped ZnO precursor layers by pulsed laser deposition</title><title>Ceramics international</title><description>The structure and electrical properties of nanostructured Al-doped ZnO (AZO)/ZnO bilayers grown as potential solar cell electrodes by pulsed laser deposition on (0001) sapphire substrates are investigated. Transmission and scanning electron microscopy and X-ray diffraction show a narrow temperature window around 350–450°C where nanostructures are formed. 2-D mapping of electrical conductivity by tunnelling atomic force microscopy showed that these nanostructures provided low resistance pathways, but that the overall film resistivity increased for substrate temperatures above 350°C. The reasons for this are discussed.</description><subject>Al-doped ZnO (AZO) and ZnO thin films</subject><subject>Aluminum</subject><subject>Azo</subject><subject>Electrical resistivity</subject><subject>Electrodes</subject><subject>Nanostructure</subject><subject>Pulsed laser deposition</subject><subject>Pulsed laser deposition (PLD)</subject><subject>Resistivity</subject><subject>Scanning electron microscopy (SEM)</subject><subject>Transmission electron microscopy (TEM)</subject><subject>Tunnelling atomic force microscopy (TUNA)</subject><subject>Zinc oxide</subject><issn>0272-8842</issn><issn>1873-3956</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNqFkEtPwzAQhC0EEqXwF5CPXBJs532jqnhJSL2UCxfLsTfUVWoH2ynKv8el5cxppZ35djWD0C0lKSW0vN-mEpzYaRNSRmieEpqSvDhDM1pXWZI1RXmOZoRVLKnrnF2iK--3JIJNTmZoWm8Afzr7HTZYGIWlNWqUQe91mLDtsBHG-uDianSg8IdZ4U73O__LGGwNXvSJssNJGxzI0XnrcC8mcB63Ex7G3ke5Fx4cVjBYr4O25hpddCIqN6c5R-9Pj-vlS_K2en5dLt4SyUoSEqpYm1GqCsLKnNUChGBEsaIRompKpVrW5kAaUcsYWjUsK2gNbSYqKisBXZfN0d3x7uDs1wg-8J32EvpeGLCj57SsaFHXRcWitTxapbPeO-j44PROuIlTwg9d8y3_65ofuuaE8vg2gg9HEGKQvQbHvdRgJCgdCwlcWf3fiR9chI4f</recordid><startdate>201407</startdate><enddate>201407</enddate><creator>Kumarakuru, Haridas</creator><creator>Cherns, David</creator><creator>Collins, Andrew M.</creator><general>Elsevier Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>201407</creationdate><title>The growth and conductivity of nanostructured ZnO films grown on Al-doped ZnO precursor layers by pulsed laser deposition</title><author>Kumarakuru, Haridas ; Cherns, David ; Collins, Andrew M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c260t-1d2b311d5026428aeaa20d259aa796ddb2b4e09a8c045d923518eb3a71c7aeff3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Al-doped ZnO (AZO) and ZnO thin films</topic><topic>Aluminum</topic><topic>Azo</topic><topic>Electrical resistivity</topic><topic>Electrodes</topic><topic>Nanostructure</topic><topic>Pulsed laser deposition</topic><topic>Pulsed laser deposition (PLD)</topic><topic>Resistivity</topic><topic>Scanning electron microscopy (SEM)</topic><topic>Transmission electron microscopy (TEM)</topic><topic>Tunnelling atomic force microscopy (TUNA)</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kumarakuru, Haridas</creatorcontrib><creatorcontrib>Cherns, David</creatorcontrib><creatorcontrib>Collins, Andrew M.</creatorcontrib><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Ceramics international</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kumarakuru, Haridas</au><au>Cherns, David</au><au>Collins, Andrew M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The growth and conductivity of nanostructured ZnO films grown on Al-doped ZnO precursor layers by pulsed laser deposition</atitle><jtitle>Ceramics international</jtitle><date>2014-07</date><risdate>2014</risdate><volume>40</volume><issue>6</issue><spage>8389</spage><epage>8395</epage><pages>8389-8395</pages><issn>0272-8842</issn><eissn>1873-3956</eissn><abstract>The structure and electrical properties of nanostructured Al-doped ZnO (AZO)/ZnO bilayers grown as potential solar cell electrodes by pulsed laser deposition on (0001) sapphire substrates are investigated. Transmission and scanning electron microscopy and X-ray diffraction show a narrow temperature window around 350–450°C where nanostructures are formed. 2-D mapping of electrical conductivity by tunnelling atomic force microscopy showed that these nanostructures provided low resistance pathways, but that the overall film resistivity increased for substrate temperatures above 350°C. The reasons for this are discussed.</abstract><pub>Elsevier Ltd</pub><doi>10.1016/j.ceramint.2014.01.045</doi><tpages>7</tpages></addata></record> |
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subjects | Al-doped ZnO (AZO) and ZnO thin films Aluminum Azo Electrical resistivity Electrodes Nanostructure Pulsed laser deposition Pulsed laser deposition (PLD) Resistivity Scanning electron microscopy (SEM) Transmission electron microscopy (TEM) Tunnelling atomic force microscopy (TUNA) Zinc oxide |
title | The growth and conductivity of nanostructured ZnO films grown on Al-doped ZnO precursor layers by pulsed laser deposition |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T09%3A59%3A19IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=The%20growth%20and%20conductivity%20of%20nanostructured%20ZnO%20films%20grown%20on%20Al-doped%20ZnO%20precursor%20layers%20by%20pulsed%20laser%20deposition&rft.jtitle=Ceramics%20international&rft.au=Kumarakuru,%20Haridas&rft.date=2014-07&rft.volume=40&rft.issue=6&rft.spage=8389&rft.epage=8395&rft.pages=8389-8395&rft.issn=0272-8842&rft.eissn=1873-3956&rft_id=info:doi/10.1016/j.ceramint.2014.01.045&rft_dat=%3Cproquest_cross%3E1671588572%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c260t-1d2b311d5026428aeaa20d259aa796ddb2b4e09a8c045d923518eb3a71c7aeff3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1671588572&rft_id=info:pmid/&rfr_iscdi=true |