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The growth and conductivity of nanostructured ZnO films grown on Al-doped ZnO precursor layers by pulsed laser deposition

The structure and electrical properties of nanostructured Al-doped ZnO (AZO)/ZnO bilayers grown as potential solar cell electrodes by pulsed laser deposition on (0001) sapphire substrates are investigated. Transmission and scanning electron microscopy and X-ray diffraction show a narrow temperature...

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Published in:Ceramics international 2014-07, Vol.40 (6), p.8389-8395
Main Authors: Kumarakuru, Haridas, Cherns, David, Collins, Andrew M.
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Language:English
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description The structure and electrical properties of nanostructured Al-doped ZnO (AZO)/ZnO bilayers grown as potential solar cell electrodes by pulsed laser deposition on (0001) sapphire substrates are investigated. Transmission and scanning electron microscopy and X-ray diffraction show a narrow temperature window around 350–450°C where nanostructures are formed. 2-D mapping of electrical conductivity by tunnelling atomic force microscopy showed that these nanostructures provided low resistance pathways, but that the overall film resistivity increased for substrate temperatures above 350°C. The reasons for this are discussed.
doi_str_mv 10.1016/j.ceramint.2014.01.045
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subjects Al-doped ZnO (AZO) and ZnO thin films
Aluminum
Azo
Electrical resistivity
Electrodes
Nanostructure
Pulsed laser deposition
Pulsed laser deposition (PLD)
Resistivity
Scanning electron microscopy (SEM)
Transmission electron microscopy (TEM)
Tunnelling atomic force microscopy (TUNA)
Zinc oxide
title The growth and conductivity of nanostructured ZnO films grown on Al-doped ZnO precursor layers by pulsed laser deposition
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