The effect of hydrogen annealing on the molybdenum doped ZnO thin film

The electrical characteristics of hydrogen annealing on the molybdenum doped ZnO (MZO) thin film were discussed in the paper. The MZO film was deposited by an radio frequency sputtering, then it was annealed in hydrogen with a microwave plasma chemical vapor deposition system. The resistivity of MZO...

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2014-05, Vol.25 (5), p.2138-2142
Main Authors: Lin, Tien-Chai, Huang, Wen-Feng, Huang, Wen-Chang
Format: Article
Language:English
Subjects:
Annealing
Characterization and Evaluation of Materials
Chemistry and Materials Science
Deposition
Electrical resistivity
Materials Science
Molybdenum
Optical and Electronic Materials
Repairing
Thin films
Transmittance
Zinc oxide
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Summary:The electrical characteristics of hydrogen annealing on the molybdenum doped ZnO (MZO) thin film were discussed in the paper. The MZO film was deposited by an radio frequency sputtering, then it was annealed in hydrogen with a microwave plasma chemical vapor deposition system. The resistivity of MZO was decreased from 1.1 × 10 −2 to 9.5 × 10 −3  Ω cm after the hydrogen annealing. Improvements of the electrical properties are both due to the defects repairing through annealing and hydrogen doping effects of the MZO thin film. The higher temperature annealed MZO film shows slightly lower transmittance which is due to the higher carrier concentration.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-014-1850-1