A Self-Aligned Process to Fabricate a Metal Electrode-Quantum Dot/Nanowire-Metal Electrode Structure with 100% Yield

Using lateral phase change random access memory (PCRAM) for demonstration, we report a self-aligned process to fabricate a metal electrode-quantum dot(QD)/nanowire(NW)-metal electrode structure. Due to the good confinement and coupling between the Ge sub(2)Sb sub(2)Te sub(5) (GST) QD and the tungste...

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Bibliographic Details
Published in:Chinese physics letters 2012-09, Vol.29 (9), p.98102-1-098102-3
Main Authors: Fu, Ying-Chun, Wang, Xiao-Feng, Fan, Zhong-Chao, Yang, Xiang, Bai, Yun-Xia, Zhang, Jia-Yong, Ma, Hui-Li, Ji, An, Yang, Fu-Hua
Format: Article
Language:English
Subjects:
Controllability
Electric potential
Electrodes
Nanowires
Phase change
Quantum dots
Reproducibility
Threshold currents
Voltage
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Summary:Using lateral phase change random access memory (PCRAM) for demonstration, we report a self-aligned process to fabricate a metal electrode-quantum dot(QD)/nanowire(NW)-metal electrode structure. Due to the good confinement and coupling between the Ge sub(2)Sb sub(2)Te sub(5) (GST) QD and the tungsten electrodes, the device shows a threshold current and voltage as small as 2.50 mu A and 1.08 V, respectively. Our process is highlighted with good controllability and repeatability with 100% yield, making it a promising fabrication process for nanoelectronics.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/29/9/098102