Ultrathin Carbon Films Prepared by Negative Cluster-Beam Technology

We develop a miniaturized chamber installed on a tandetron accelerator into which negative ions of small carbon clusters are transported. Negative clusters C sub(1) -C sub(10) are obtained with beam currents of 1-10 super(4) nA at energies of 10-20keV. C sub(2) beams of 0.2 mu A are used to directly...

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Bibliographic Details
Published in:Chinese physics letters 2012-07, Vol.29 (7), p.78101-1-078101-3
Main Authors: Zhang, Zao-Di, Wang, Ze-Song, Wang, Shi-Xu, Fu, De-Jun
Format: Article
Language:English
Subjects:
Accelerators
Carbon
Chambers
Clusters
Deposition
Evolution
Raman scattering
Silicon substrates
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Summary:We develop a miniaturized chamber installed on a tandetron accelerator into which negative ions of small carbon clusters are transported. Negative clusters C sub(1) -C sub(10) are obtained with beam currents of 1-10 super(4) nA at energies of 10-20keV. C sub(2) beams of 0.2 mu A are used to directly deposit carbon films on SiO sub(2)/Si substrates. Formation of ultrathin carbon films are demonstrated by Raman scattering, which reveals the evolution of the graphitic peak (1550 cm super(-2)) with deposition time.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/29/7/078101