Selective Area Atomic Layer Deposition (ALD) with E-Beam Lithography (EBL) on Self-Assembled Monolayers (SAM)

In this study, nano-line patterns are defined by electron beam lithography (EBL) on octadecyltrichlorosilane (OTS) SAMs modified Si/SiO2 substrates. During the EBL process, SAMs on solid substrates can be damaged or removed to generate discernible patterns. A thin film of titanium oxide (TiO2) is de...

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Bibliographic Details
Published in:AIP conference proceedings 2012-03
Main Authors: Huang, Jie, Lee, Mingun, Kim, Jiyoung
Format: Article
Language:English
Subjects:
Deposition
Electron beam lithography
Nanocomposites
Nanomaterials
Nanostructure
Scanning electron microscopy
Silicon substrates
Titanium dioxide
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Summary:In this study, nano-line patterns are defined by electron beam lithography (EBL) on octadecyltrichlorosilane (OTS) SAMs modified Si/SiO2 substrates. During the EBL process, SAMs on solid substrates can be damaged or removed to generate discernible patterns. A thin film of titanium oxide (TiO2) is deposited by atomic layer deposition (ALD), of which deposition mechanism is a self-limiting surface reaction, selectively on the e-beam patterned nano-lines. To control the width of the metal oxide patterns, we have optimized the conditions of both EBL and ALD. As characterized by scanning electron microscope (SEM), atomic force microscope (AFM) and high resolution transmission electron microscope (HRTEM), selectively deposited TiO2 line patterns with sub-30 nm in width and 50 nm in pitch were achieved with e-beam voltage of 2 kV and line dose of 10 nC/cm. Proximity effect prevent dense line to be patterned closer than 50 nm in pitch.
ISSN:0094-243X