The Effect of Ga2 Se3 Doping Ratios on Structure, Composition, and Electrical Properties of CuIn0.5 Ga0.5 Se2 Absorber Formed by Thermal Sintering

Chalcopyrite compounds of copper indium gallium diselenide (CIGS) absorber were fabricated by using binary-particle ([subscript]Cu2[/subscript] Se , [subscript]In2[/subscript] [subscript]Se3[/subscript] , and [subscript]Ga2[/subscript] [subscript]Se3[/subscript] ) precursors with thermal sintering m...

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Bibliographic Details
Published in:International journal of photoenergy 2013-01, Vol.2013
Main Authors: Liu, Chung Ping, Ming Wei Chang, Chuang, Chuan Lung
Format: Article
Language:English
Subjects:
Carrier density
Chalcopyrite
CIGS
Copper
DENSITY
Doping
ELECTRICAL PROPERTIES
Glass substrates
Grain size
Indium
Intermetallic compounds
Nanoparticles
Photovoltaic cells
Precursors
PROPERTIES
Ratios
Scanning electron microscopy
SINTERING
Sintering (powder metallurgy)
Solar energy
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Summary:Chalcopyrite compounds of copper indium gallium diselenide (CIGS) absorber were fabricated by using binary-particle ([subscript]Cu2[/subscript] Se , [subscript]In2[/subscript] [subscript]Se3[/subscript] , and [subscript]Ga2[/subscript] [subscript]Se3[/subscript] ) precursors with thermal sintering method. The binary-particle ink was firstly prepared by milling technology and then printed onto a soda lime glass substrate, which was baked at a low temperature to remove solvents and form a dry precursor. Following milling, the average particle size of agglomerated CIGS powder is smaller than 1.1 μm. Crystallographic, stoichiometric, and electrical properties of precursor CIGS films with various doping amounts of [subscript]Ga2[/subscript] [subscript]Se3[/subscript] had been widely investigated by using thermal sintering in a nonvacuum environment without selenization. Analytical results reveal that the CIGS absorption layer prepared with a [subscript]Ga2[/subscript] [subscript]Se3[/subscript] doping ratio of 3 has a chalcopyrite structure and favorable composition. The mole ratio of Cu : In : Ga : Se of this sample was 1.03 : 0.49 : 0.54 : 1.94, and related ratios of Ga/(In + Ga) and Cu/(In + Ga) were 0.52 and 0.99, respectively. The resistivity and carrier concentration were 3.77 ohm-cm and 1.15 E + 18 [superscript]cm-3[/superscript] .
ISSN:1110-662X
1687-529X
DOI:10.1155/2013/936364