The Effect of Ga2 Se3 Doping Ratios on Structure, Composition, and Electrical Properties of CuIn0.5 Ga0.5 Se2 Absorber Formed by Thermal Sintering

Chalcopyrite compounds of copper indium gallium diselenide (CIGS) absorber were fabricated by using binary-particle ([subscript]Cu2[/subscript] Se , [subscript]In2[/subscript] [subscript]Se3[/subscript] , and [subscript]Ga2[/subscript] [subscript]Se3[/subscript] ) precursors with thermal sintering m...

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Published in:International journal of photoenergy 2013-01, Vol.2013
Main Authors: Liu, Chung Ping, Ming Wei Chang, Chuang, Chuan Lung
Format: Article
Language:English
Subjects:
Carrier density
Chalcopyrite
CIGS
Copper
DENSITY
Doping
ELECTRICAL PROPERTIES
Glass substrates
Grain size
Indium
Intermetallic compounds
Nanoparticles
Photovoltaic cells
Precursors
PROPERTIES
Ratios
Scanning electron microscopy
SINTERING
Sintering (powder metallurgy)
Solar energy
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Ming Wei Chang
Chuang, Chuan Lung
description Chalcopyrite compounds of copper indium gallium diselenide (CIGS) absorber were fabricated by using binary-particle ([subscript]Cu2[/subscript] Se , [subscript]In2[/subscript] [subscript]Se3[/subscript] , and [subscript]Ga2[/subscript] [subscript]Se3[/subscript] ) precursors with thermal sintering method. The binary-particle ink was firstly prepared by milling technology and then printed onto a soda lime glass substrate, which was baked at a low temperature to remove solvents and form a dry precursor. Following milling, the average particle size of agglomerated CIGS powder is smaller than 1.1 μm. Crystallographic, stoichiometric, and electrical properties of precursor CIGS films with various doping amounts of [subscript]Ga2[/subscript] [subscript]Se3[/subscript] had been widely investigated by using thermal sintering in a nonvacuum environment without selenization. Analytical results reveal that the CIGS absorption layer prepared with a [subscript]Ga2[/subscript] [subscript]Se3[/subscript] doping ratio of 3 has a chalcopyrite structure and favorable composition. The mole ratio of Cu : In : Ga : Se of this sample was 1.03 : 0.49 : 0.54 : 1.94, and related ratios of Ga/(In + Ga) and Cu/(In + Ga) were 0.52 and 0.99, respectively. The resistivity and carrier concentration were 3.77 ohm-cm and 1.15 E + 18 [superscript]cm-3[/superscript] .
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The binary-particle ink was firstly prepared by milling technology and then printed onto a soda lime glass substrate, which was baked at a low temperature to remove solvents and form a dry precursor. Following milling, the average particle size of agglomerated CIGS powder is smaller than 1.1 μm. Crystallographic, stoichiometric, and electrical properties of precursor CIGS films with various doping amounts of [subscript]Ga2[/subscript] [subscript]Se3[/subscript] had been widely investigated by using thermal sintering in a nonvacuum environment without selenization. Analytical results reveal that the CIGS absorption layer prepared with a [subscript]Ga2[/subscript] [subscript]Se3[/subscript] doping ratio of 3 has a chalcopyrite structure and favorable composition. The mole ratio of Cu : In : Ga : Se of this sample was 1.03 : 0.49 : 0.54 : 1.94, and related ratios of Ga/(In + Ga) and Cu/(In + Ga) were 0.52 and 0.99, respectively. The resistivity and carrier concentration were 3.77 ohm-cm and 1.15 E + 18 [superscript]cm-3[/superscript] .</description><identifier>ISSN: 1110-662X</identifier><identifier>EISSN: 1687-529X</identifier><identifier>DOI: 10.1155/2013/936364</identifier><language>eng</language><publisher>New York: Hindawi Limited</publisher><subject>Carrier density ; Chalcopyrite ; CIGS ; Copper ; DENSITY ; Doping ; ELECTRICAL PROPERTIES ; Glass substrates ; Grain size ; Indium ; Intermetallic compounds ; Nanoparticles ; Photovoltaic cells ; Precursors ; PROPERTIES ; Ratios ; Scanning electron microscopy ; SINTERING ; Sintering (powder metallurgy) ; Solar energy</subject><ispartof>International journal of photoenergy, 2013-01, Vol.2013</ispartof><rights>Copyright © 2013 Chung Ping Liu et al. Chung Ping Liu et al. 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The binary-particle ink was firstly prepared by milling technology and then printed onto a soda lime glass substrate, which was baked at a low temperature to remove solvents and form a dry precursor. Following milling, the average particle size of agglomerated CIGS powder is smaller than 1.1 μm. Crystallographic, stoichiometric, and electrical properties of precursor CIGS films with various doping amounts of [subscript]Ga2[/subscript] [subscript]Se3[/subscript] had been widely investigated by using thermal sintering in a nonvacuum environment without selenization. Analytical results reveal that the CIGS absorption layer prepared with a [subscript]Ga2[/subscript] [subscript]Se3[/subscript] doping ratio of 3 has a chalcopyrite structure and favorable composition. The mole ratio of Cu : In : Ga : Se of this sample was 1.03 : 0.49 : 0.54 : 1.94, and related ratios of Ga/(In + Ga) and Cu/(In + Ga) were 0.52 and 0.99, respectively. 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source Wiley Online Library Open Access; Publicly Available Content Database
subjects Carrier density
Chalcopyrite
CIGS
Copper
DENSITY
Doping
ELECTRICAL PROPERTIES
Glass substrates
Grain size
Indium
Intermetallic compounds
Nanoparticles
Photovoltaic cells
Precursors
PROPERTIES
Ratios
Scanning electron microscopy
SINTERING
Sintering (powder metallurgy)
Solar energy
title The Effect of Ga2 Se3 Doping Ratios on Structure, Composition, and Electrical Properties of CuIn0.5 Ga0.5 Se2 Absorber Formed by Thermal Sintering
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