High-temperature buried InP/GaInAsP heterostructure laser diode emitting at 1310 nm

As a continuation of our studies aimed at creating semiconductor lasers based on buried InP/GaInAsP heterostructures, we consider the design and fabrication aspects of 1310-nm laser diodes for operation at elevated temperatures. We report the key features of the fabrication process and parameters of...

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Published in:Inorganic materials 2014-09, Vol.50 (9), p.888-891
Main Authors: Vasil’ev, M. G., Vasil’ev, A. M., Izotov, A. D., Shelyakin, A. A.
Format: Article
Language:English
Subjects:
Chemistry
Chemistry and Materials Science
Emittance
Heterostructures
Indium phosphides
Industrial Chemistry/Chemical Engineering
Inorganic Chemistry
Inorganic materials
Laser diodes
Lasers
Materials Science
On the Occasion of the Eighty-Fifth Birthday of Academician V.B. Lazarev
Semiconductor lasers
Spectral emittance
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container_issue 9
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creator Vasil’ev, M. G.
Vasil’ev, A. M.
Izotov, A. D.
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description As a continuation of our studies aimed at creating semiconductor lasers based on buried InP/GaInAsP heterostructures, we consider the design and fabrication aspects of 1310-nm laser diodes for operation at elevated temperatures. We report the key features of the fabrication process and parameters of the laser emitters at temperatures of up to 120°C, and present their power-current and spectral characteristics.
doi_str_mv 10.1134/S0020168514090167
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subjects Chemistry
Chemistry and Materials Science
Emittance
Heterostructures
Indium phosphides
Industrial Chemistry/Chemical Engineering
Inorganic Chemistry
Inorganic materials
Laser diodes
Lasers
Materials Science
On the Occasion of the Eighty-Fifth Birthday of Academician V.B. Lazarev
Semiconductor lasers
Spectral emittance
title High-temperature buried InP/GaInAsP heterostructure laser diode emitting at 1310 nm
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