An analytical subthreshold current modeling of cylindrical gate all around (CGAA) MOSFET incorporating the influence of device design engineering

An analytical model of CGAA MOSFET incorporating material engineering, channel engineering and stack engineering has been proposed and verified using ATLAS 3D device simulator. A comparative study of short channel effects for various device structures has also been carried out incorporating the effe...

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Bibliographic Details
Published in:Microelectronics 2014-04, Vol.45 (4), p.408-415
Main Authors: Pratap, Yogesh, Ghosh, Pujarini, Haldar, Subhasis, Gupta, R.S., Gupta, Mridula
Format: Article
Language:English
Subjects:
Channels
Computer simulation
Cylindrical gate all around (CGAA) MOSFET
Design engineering
Devices
Doping
Dual-material (DM)
Gate stack (GS)
Graded channel (GC)
Mathematical analysis
MOSFETs
Short channel effects (SCEs)
Three dimensional
Triple-material (TM)
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Summary:An analytical model of CGAA MOSFET incorporating material engineering, channel engineering and stack engineering has been proposed and verified using ATLAS 3D device simulator. A comparative study of short channel effects for various device structures has also been carried out incorporating the effect of drain induced barrier lowering (DIBL), threshold voltage lowering and degradation of subthreshold slope. The effectiveness of applying the three region doping profile concept in the channel such as high-medium-low and low-high-low and its comparison with Gaussian doping profile to the cylindrical GAA MOSFET has been examined in detail. Reduced SCEs have been evaluated in combined designs i.e. TM–GC–GS, GCGS and DM–GC–GS. Out of several design engineering, GC–GS CGAA gives nearly ideal subthreshold slope whereas TM–GC–GS CGAA provides overall superior performance to reduce SCEs in deep nano-meter. The results so obtained are in good agreement with the simulated data which validate the model. •The analytical model is developed using super position technique.•GC–GS with high metal work function exhibits minimum sub threshold characteristics.•Reduced DIBL and subthreshold slope has been measured in combined design.•Proper optimization of doping profile significantly reduces DIBL effect.•Effectiveness of applying the three region doping profile concept in the channel has been examined.
ISSN:1879-2391
0026-2692
1879-2391
DOI:10.1016/j.mejo.2014.01.015