Non-exponential resistive switching in Ag sub(2)S memristors: a key to nanometer-scale non-volatile memory devices

The dynamics of resistive switchings in nanometer-scale metallic junctions formed between an inert metallic tip and an Ag film covered by a thin Ag sub(2)S layer are investigated. Our thorough experimental analysis and numerical simulations revealed that the resistance change upon a switching bias v...

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Bibliographic Details
Published in:Nanoscale 2015-02, Vol.7 (10), p.4394-4399
Main Authors: Gubicza, Agnes, Csontos, Miklos, Halbritter, Andras, Mihaly, Gyorgy
Format: Article
Language:English
Subjects:
Bias
Computer simulation
Data storage
Durability
Endurance
Memory devices
Nanostructure
Silver
Switching
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Summary:The dynamics of resistive switchings in nanometer-scale metallic junctions formed between an inert metallic tip and an Ag film covered by a thin Ag sub(2)S layer are investigated. Our thorough experimental analysis and numerical simulations revealed that the resistance change upon a switching bias voltage pulse exhibits a strongly non-exponential behaviour yielding markedly different response times at different bias levels. Our results demonstrate the merits of Ag sub(2)S nanojunctions as nanometer-scale non-volatile memory cells with stable switching ratios, high endurance as well as fast response to write/erase, and an outstanding stability against read operations at technologically optimal bias and current levels.
ISSN:2040-3364
2040-3372
DOI:10.1039/c5nr00399g