Colloidal silicon quantum dots: synthesis and luminescence tuning from the near-UV to the near-IR range

This review describes a series of representative synthesis processes, which have been developed in the last two decades to prepare silicon quantum dots (QDs). The methods include both top-down and bottom-up approaches, and their methodological advantages and disadvantages are presented. Considerable...

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Bibliographic Details
Published in:Science and technology of advanced materials 2014-02, Vol.15 (1), p.014207-14
Main Authors: Ghosh, Batu, Shirahata, Naoto
Format: Article
Language:English
Subjects:
Color
Emission
Emitters
Focus
Industrial applications
Luminescence
Nanocrystals
Nanostructure
Near infrared radiation
Photoluminescence
Quantum dots
Quantum size effect
Silicon
Surface chemistry
Synthesis
Tuning
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Summary:This review describes a series of representative synthesis processes, which have been developed in the last two decades to prepare silicon quantum dots (QDs). The methods include both top-down and bottom-up approaches, and their methodological advantages and disadvantages are presented. Considerable efforts in surface functionalization of QDs have categorized it into (i) a two-step process and (ii) in situ surface derivatization. Photophysical properties of QDs are summarized to highlight the continuous tuning of photoluminescence color from the near-UV through visible to the near-IR range. The emission features strongly depend on the silicon nanostructures including QD surface configurations. Possible mechanisms of photoluminescence have been summarized to ascertain the future challenges toward industrial use of silicon-based light emitters.
ISSN:1468-6996
1878-5514
DOI:10.1088/1468-6996/15/1/014207