Chemical Structure of Interfacial Transition Layer Formed on Si(100) and Its Dependence on Oxidation Temperature, Annealing in Forming Gas, and Difference in Oxidizing Species

The angle-resolved Si 2p photoelectron spectra arising from a interfacial transition layer formed on a Si(100) were measured with a probing depth of nearly 2 nm. The novel analytical procedure of these spectra was developed by considering that one SiO 2 monolayer, two compositional transition layers...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 2013-03, Vol.52 (3), p.031302-031302-14
Main Authors: Suwa, Tomoyuki, Teramoto, Akinobu, Kumagai, Yuki, Abe, Kenichi, Li, Xiang, Nakao, Yukihisa, Yamamoto, Masashi, Nohira, Hiroshi, Muro, Takayuki, Kinoshita, Toyohiko, Sugawa, Shigetoshi, Ohmi, Tadahiro, Hattori, Takeo
Format: Article
Language:English
Subjects:
Annealing
Density
Forming
Monolayers
Oxidation
Silicon substrates
Spectra
Transition layers
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The angle-resolved Si 2p photoelectron spectra arising from a interfacial transition layer formed on a Si(100) were measured with a probing depth of nearly 2 nm. The novel analytical procedure of these spectra was developed by considering that one SiO 2 monolayer, two compositional transition layers (CTLs), and one Si monolayer constituting the Si substrate surface are continuously connected with each other to maintain the areal density of Si atoms. It was found for thermally grown transition layers that two CTLs are formed on the oxide side of the CTL/Si interface and the chemical structures correlated with the residual stress appear on the Si substrate side of the interface. The effects of oxidation temperature in the range from 900 to 1050 °C, annealing in the forming gas, and oxidation using oxygen radicals on the chemical structures of transition layers formed on both sides of the interface were also clarified.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.52.031302