Device Technology for GaN Mixed-Signal Integrated Circuits

A device technology platform for implementing GaN mixed-signal integrated circuits is presented. High-performance GaN enhancement-/depletion-mode (E/D-mode) high electron mobility transistors (HEMTs) are the key devices for implementing digital/analog functional blocks, while Schottky diodes and lat...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2013-11, Vol.52 (11), p.11NH05-11NH05-4
Main Authors: Chen, Kevin Jing, Kwan, Alex Man Ho
Format: Article
Language:English
Subjects:
Circuits
Control systems
Devices
Gallium nitrides
High electron mobility transistors
Integrated circuits
Platforms
Semiconductor devices
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Description
Summary:A device technology platform for implementing GaN mixed-signal integrated circuits is presented. High-performance GaN enhancement-/depletion-mode (E/D-mode) high electron mobility transistors (HEMTs) are the key devices for implementing digital/analog functional blocks, while Schottky diodes and lateral field-effect rectifiers provide useful components for sensing circuits. As a case study, a GaN 2-bit quantizer circuit fabricated on that platform is demonstrated, leading a way to highly integrated system-on-chip solutions for protection/sense/control applications.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.52.11NH05