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Growth of superconducting NdFe sub(0.88)Co sub(0.12)AsO films by metal-organic chemical vapor deposition and post arsenic diffusion

Metal-organic chemical vapor deposition (MOCVD) and post-deposition arsenic diffusion processes were successfully employed to grow superconducting NdFe sub(0.88)Co sub(0.12)AsO thin films. First, by employing iron, cobalt and neodymium metal-organic precursors, a precursor film is grown by MOCVD on...

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Bibliographic Details
Published in:Europhysics letters 2015-01, Vol.109 (1), p.17007-p1-17007-p5
Main Authors: Corrales-Mendoza, I, Bartolo-Perez, P, Sanchez-Resendiz, V M, Gallardo-Hernandez, S, Conde-Gallardo, A
Format: Article
Language:English
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Summary:Metal-organic chemical vapor deposition (MOCVD) and post-deposition arsenic diffusion processes were successfully employed to grow superconducting NdFe sub(0.88)Co sub(0.12)AsO thin films. First, by employing iron, cobalt and neodymium metal-organic precursors, a precursor film is grown by MOCVD on (001)-oriented LaAlO sub(3) substrates. Subsequently, the arsenic is incorporated during an annealing of these precursor films in the presence of a NdFe sub(0.9)Co sub(0.1)AsO pellet. The chemical composition and crystallographic results indicate the formation of the cobalt-doped NdFeAsO polycrystalline phase. The secondary ion mass spectroscopy indicates a homogeneous arsenic diffusion process. The resistance and magnetization measurements as a function of temperature indicate a superconducting transition ~15K.
ISSN:0295-5075
1286-4854
DOI:10.1209/0295-5075/109/17007