An investigation of device reliability for a micro-machined AlGaN/GaN/Si high electron mobility transistor using low frequency noise measurement

• Published in: Microelectronic engineering 2014-02, Vol.114, p.117-120
• Main Authors: Chiu, Hsien-Chin, Wang, Hsiang-Chun, Wu, Chia-Hsuan, Huang, Fan-Hsiu, Kao, Hsuan-Ling, Chien, Feng-Tso
• Format: Article
• Language: English
• Subjects: Applied sciences; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Copper; Devices; Dielectric, piezoelectric, ferroelectric and antiferroelectric materials; Dielectrics, piezoelectrics, and ferroelectrics and their properties; Electronics; Exact sciences and technology; Gallium nitrides; HEMT; High electron mobility transistors; Low frequencies; Low frequency noise; Micro-machined; Noise measurement; Physics; Pulse measurement; Reliability GaN on insulator; Semiconductor devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon; Transistors
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2013.10.005

[Display omitted] •The device reliability of micromachined AlGaN/GaN/Si HEMT was studied.•MEMS GaN-on-insulator structure was demonstrated.•The self-heating of GaN HEMT under high current operation is overcome.•Thick copper thermal sinking layer design was adopted.•Lattice mismatched induced traps of GaN/Si interface was also eliminated. The reliability of a micro-machined AlGaN/GaN/Si high electron mobility transistor (HEMT) device is studied using drain current low frequency noise measurements for various stress conditions. After removal of the Si substrate beneath the HEMT, a high quality 300nm layer of SiO2 and a 20μm copper layer are deposited to form the GaN-on-insulator structure. Compared to previous full substrate removal methods, the self-heating effect of the GaN HEMT under high current operation is overcome because there is a thick copper thermal sinking layer in the design. In addition, the traps at the buffer/transition interface are also eliminated, which is a dominant factor in device reliability after long-term stress.