Junction properties and conduction mechanism of new terbium complexes with triethylene glycol ligand for potential application in organic electronic device

• Published in: Journal of rare earths 2014-07, Vol.32 (7), p.633-640
• Main Authors: Za'aba, N.K., Sarjidan, M.A. Mohd, Majid, W.H. Abd, Kusrini, Eny, Saleh, Muhammad I.
• Format: Article
• Language: English
• Subjects: Aluminum; current-voltage; Devices; Electronics; Mathematical models; optical band gap; Rare earth metals; rare earths; Spin coating; Tauc model; terbium-picrate complex; Thin films; Triethylene glycol; 三乙二醇; 传导机制; 吸收光谱分析; 应用; 性能; 有机电子器件; 配体; 铽络合物
• ISSN: 1002-0721; 2509-4963
• DOI: 10.1016/S1002-0721(14)60119-8

Terbium-picrate triethylene glycol（EO3-Tb-Pic） complex was prepared in thin film and single layer device structure of ITO/EO3-Tb-Pic/Al, using spin coating technique. The UV-Vis absorption spectroscopy analysis was performed to evaluate the electronic molecular transition of the complex. The optical band gap, Eg estimated from the Tauc model revealed that EO3-Tb-Pic thin film exhibited a direct transition with Eg of 2.70 eV. The electronic parameters of the ITO/EO3-Tb-Pic/Al device such as the ideality factor n, barrier height Φb, saturation current Io, and series resistance Rs, were extracted from the conventional lnI-V, Cheung＇s functions and Norde＇s method. It was found that the evaluated parameters calculated from Norde＇s and Cheung＇s methods were consistent with those calculated from the conventional I-V method. In the double logarithmic I-V plot, three distinct regions based on the slope were identified, and the conduction mechanisms were discussed and explained. The mobility, μ value was estimated from SCLC region as 2.58×10^–7 cm2/（V·s）. This newly obtained lanthanide complex may be potentially utilized in electronic devices.