Integration of SiC-1D nanostructures into nano-field effect transistors

We report on the integration and the electrical transport properties of silicon carbide-based one-dimensional nanostructures into field effect transistors. Different kinds of SiC-based 1D nanostructures have been used: 3C– and 4H–SiC nanowires obtained by a plasma etching process, Si–SiC core–shell...

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Bibliographic Details
Published in:Materials science in semiconductor processing 2015-01, Vol.29, p.218-222
Main Authors: Ollivier, M., Latu-Romain, L., Salem, B., Fradetal, L., Brouzet, V., Choi, J.-H., Bano, E.
Format: Article
Language:English
Subjects:
Carburizing
Field-effect transistor
Nanostructure
Nanotube
Nanotubes
Nanowire
Nanowires
Semiconductor devices
Semiconductors
Silicon
Silicon carbide
Transport properties
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Summary:We report on the integration and the electrical transport properties of silicon carbide-based one-dimensional nanostructures into field effect transistors. Different kinds of SiC-based 1D nanostructures have been used: 3C– and 4H–SiC nanowires obtained by a plasma etching process, Si–SiC core–shell nanowires and SiC nanotubes both obtained by a carburization route of silicon nanowires.
ISSN:1369-8001
1873-4081
DOI:10.1016/j.mssp.2014.03.020