Enhancement of QDs' fluorescence based on porous silicon Bragg mirror

We fabricated a new porous silicon photonic device which is a special multi-layer porous silicon including two different single layer porous silicon and a porous silicon Bragg mirror, and investigated the influence of porous silicon Bragg mirror's structure on the fluorescence intensity of quan...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2015-01, Vol.457, p.263-268
Main Authors: Liu, Chao, Jia, Zhenhong, Lv, Xiaoyi, Lv, Changwu, Shi, Fugui
Format: Article
Language:English
Subjects:
Cadmium selenides
Condensed matter
Devices
Emittance
Enhancement
Fluorescence
High reflection band
Multilayers
Porous silicon
QDs
Quantum dots
Reflection
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Summary:We fabricated a new porous silicon photonic device which is a special multi-layer porous silicon including two different single layer porous silicon and a porous silicon Bragg mirror, and investigated the influence of porous silicon Bragg mirror's structure on the fluorescence intensity of quantum dots (QDs) which infiltrated into porous silicon device, and CdSe/ZnS QDs we used emit at 605nm and 625nm respectively. By immersing porous silicon samples in QDs solution, QDs were successfully infiltrated into porous silicon devices which have high reflection band at or beyond fluorescence peak. Experimental results show that the fluorescence intensity of QDs which infiltrated into the first layer of porous silicon device can be enhanced when fluorescence peak falls into the high reflection band of porous silicon device.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2014.10.005