Real-time measurement of substrate temperature in molecular beam epitaxy using low-coherence tandem interferometry

• Published in: Journal of crystal growth 2015-03, Vol.413, p.42-45
• Main Authors: Yurasov, D.V., Luk׳yanov, A.Yu, Volkov, P.V., Goryunov, A.V., Tertyshnik, A.D., Drozdov, M.N., Novikov, A.V.
• Format: Article
• Language: English
• Subjects: A1. Impurities; A3. Molecular beam epitaxy; B2. Semiconducting silicon; Consumption; Crystal growth; Crystals; Interferometry; Low-coherence interferometry; Molecular beam epitaxy; Real time; Real-time temperature measurements; Silicon; Switching
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2014.12.008

It was demonstrated that the low-coherence interferometry technique can be successfully applied to real-time substrate temperature evaluation during molecular beam epitaxy in a wide range down to room temperature. The proposed technique was used for formation of silicon layers delta-doped by antimony. Due to shortening of the growth interruptions needed for temperature switching the low-coherence interferometry technique allows improving the crystal quality of the grown samples and reducing the material and time consumption. These advantages become extremely beneficial with lowering of the growth temperatures. •Low-coherence interferometry method of temperature evaluation in MBE is presented.•This technique allows real-time measurements during growth.•Low temperatures in MBE growth process could be measured directly.•Growth interruptions needed for temperature change can be shortened significantly.•Si:Sb delta-doped layers was formed using this technique with abrupt boundaries.