Advances in ion beam modification of semiconductors

•An overview of the current status of ion-implantation research in semiconductors.•Overview of developments in ion-implantation of silicon.•Review of doping, radiation damage and annealing processes in Ge and SiC, GaN and ZnO. This review provides an overview of the current status of ion-implantatio...

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Published in:Current opinion in solid state & materials science 2015-02, Vol.19 (1), p.49-67
Main Authors: Elliman, R.G., Williams, J.S.
Format: Article
Language:English
Subjects:
Annealing
Devices
Doping
Gallium nitride
Gallium nitrides
Germanium
Implantation
Ion implantation
Materials science
Semiconductor
Semiconductors
Silicon
Silicon carbide
Zinc oxide
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description •An overview of the current status of ion-implantation research in semiconductors.•Overview of developments in ion-implantation of silicon.•Review of doping, radiation damage and annealing processes in Ge and SiC, GaN and ZnO. This review provides an overview of the current status of ion-implantation research in silicon, germanium and the compound semiconductors SiC, GaN and ZnO. The discussion of silicon includes recent developments in metrology and device simulation, as well as a brief discussion of emerging applications in photovoltaics and quantum electronics. That of Ge includes a more detailed overview of doping, radiation damage and annealing processes due to the renewed research interest in this material. Finally, the discussion of compound semiconductors focuses on the newer wide bandgap materials where there are remaining implantation issues to be solved and potentially new implantation applications emerging.
doi_str_mv 10.1016/j.cossms.2014.11.007
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subjects Annealing
Devices
Doping
Gallium nitride
Gallium nitrides
Germanium
Implantation
Ion implantation
Materials science
Semiconductor
Semiconductors
Silicon
Silicon carbide
Zinc oxide
title Advances in ion beam modification of semiconductors
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