Dielectric substrate effect on the temperature-dependent electrical properties of pentacene films

Developing better contacts on dielectrics is one of the main challenges for pentacene-based transistor technology. This study investigates the effect of inorganic dielectrics on the temperature-dependent electronic property of pentacene films. It is found that the carrier mobility in the pentacene f...

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2015-04, Vol.26 (4), p.2579-2583
Main Authors: Lin, Yow-Jon, Tsao, Hou-Yen, Liu, Day-Shan
Format: Article
Language:English
Subjects:
Carrier mobility
Characterization and Evaluation of Materials
Chemistry and Materials Science
Deposition
Dielectric properties
Dielectrics
Dominance
Electrical properties
Materials Science
Optical and Electronic Materials
Pentacene
Polarons
Semiconductor devices
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Summary:Developing better contacts on dielectrics is one of the main challenges for pentacene-based transistor technology. This study investigates the effect of inorganic dielectrics on the temperature-dependent electronic property of pentacene films. It is found that the carrier mobility in the pentacene film deposited on a SiN x dielectric is higher than that in the pentacene film deposited on a SiO 2 dielectric. However, the carrier density does not change substantially. The dependence of the carrier mobility upon temperature indicates the dominance of tunneling (hopping) at low (high) temperatures. The Hall-effect analysis by using the polaron theory revealed that the enhanced carrier mobility is due to the modified spacing between molecules in the pentacene layer.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-015-2726-8