Arrangement of GaN nanowires grown by plasma-assisted molecular beam epitaxy on silicon substrates with amorphous Al sub(2)O sub(3) buffers

We report on catalyst-free growth of GaN nanowires (NWs) by plasma-assisted molecular beam epitaxy on Si(111) substrates with a thin amorphous Al sub(2)O sub(3) buffer layers deposited at low temperature by atomic layer deposition. We show that nanowires obtained are homogenously distributed and wel...

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Bibliographic Details
Published in:Journal of crystal growth 2014-09, Vol.401, p.665-669
Main Authors: Sobanska, M, Wierzbicka, A, Klosek, K, Borysiuk, J, Tchutchulashvili, G, Gieraltowska, S, Zytkiewicz, Z R
Format: Article
Language:English
Subjects:
Alignment
Aluminum oxide
Buffers
Deposition
Gallium nitrides
Molecular beam epitaxy
Nanowires
Silicon substrates
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Summary:We report on catalyst-free growth of GaN nanowires (NWs) by plasma-assisted molecular beam epitaxy on Si(111) substrates with a thin amorphous Al sub(2)O sub(3) buffer layers deposited at low temperature by atomic layer deposition. We show that nanowires obtained are homogenously distributed and well aligned with the c-axis perpendicular to the substrate in a similar way as their counterparts grown without the Al sub(2)O sub(3) buffer. However, NWs are twisted nearly randomly and do not show any in-plane alignment with the substrate even for the thinnest (~2 nm) buffer used, which is quite opposite to the behavior observed for NWs grown on a bare silicon.
ISSN:0022-0248
DOI:10.1016/j.jcrysgro.2013.11.056