Numerical study of silicon crystal ridge growth

• Published in: Journal of crystal growth 2014-09, Vol.401, p.137-140
• Main Authors: Barinovs, G., Sabanskis, A., Muiznieks, A.
• Format: Article
• Language: English
• Subjects: A1. Growth models; A2. Czochralski method; A2. Growth from melt; B1. Semiconducting silicon; Brackets; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Crystal growth; Crystals; Defects and impurities in crystals; microstructure; Exact sciences and technology; Growth from melts; zone melting and refining; Linear defects: dislocations, disclinations; Materials science; Mathematical models; Methods of crystal growth; physics of crystal growth; Orientation; Physics; Ridges; Silicon; Structure of solids and liquids; crystallography; Supercooling
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2013.12.019

The size of the ridge-like protrusions appearing on the external surface of dislocation-free 〈100〉 silicon crystals grown from a melt was studied theoretically. According to existing models the growth of the ridges is caused by the presence of {111} crystal planes at the crystal–melt interface. They affect the height of triple phase line, free surface orientation and the crystal growth angle. A numerical 2-dimensional model was proposed for the calculation of the size of the crystal ridges. The model included the effect of the undercooling of the crystal–melt interface on the crystal growth angle. The numerical model estimated the effect of the ridge size on the free surface at the triple phase line. The size of the crystal ridges was calculated for the 〈100〉 silicon crystals grown by the Czochralski process. It was shown that the crystal ridge growth is sensitive to the physical conditions at the triple phase line. •A numerical 2-dimensional model was proposed for the calculation of the size of the crystal ridges.•The size of the crystal ridges was calculated for the 〈100〉 silicon crystals grown by the Czochralski process.•It was shown that the crystal ridge growth is sensitive to the physical conditions at the triple phase line.