Properties of Li-Doped ZnO Films Deposited on Diamond Films

Li-doped zinc oxide (ZnO) films were deposited on nucleation side of freestanding diamond (FSD) films by the radio frequency magnetron sputtering method. The effect of oxygen partial pressure on structural, optical and electrical properties of the ZnO films was investigated by X-ray diffraction (XRD...

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Bibliographic Details
Published in:Key engineering materials 2013-03, Vol.544, p.234-237
Main Authors: Wang, Lin Jun, Tang, Ke, Ren, Bing, Zhou, Jie, Huang, Jian, Lin, Mei Ai, Xia, Yi Ben
Format: Article
Language:English
Subjects:
Deposition
Diamonds
Diffraction
Electrical properties
Nucleation
Semiconductors
X-ray diffraction
Zinc oxide
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Summary:Li-doped zinc oxide (ZnO) films were deposited on nucleation side of freestanding diamond (FSD) films by the radio frequency magnetron sputtering method. The effect of oxygen partial pressure on structural, optical and electrical properties of the ZnO films was investigated by X-ray diffraction (XRD) Raman spectroscopy, semiconductor characterization system and Hall effect measurement system. The results showed that the introduction of oxygen as a reactive gas was helpful to improve the crystalline quality of Li-doped ZnO films.
ISSN:1013-9826
1662-9795
1662-9795
DOI:10.4028/www.scientific.net/KEM.544.234