Optical properties of plasmons in a multiple quantum well semiconductor superlattice under electric and magnetic fields

• Published in: Physica. B, Condensed matter Condensed matter, 2014-10, Vol.451, p.7-11
• Main Authors: Soo Ahn, Hyung, Chil Lee, Sang, Whan Kim, Suck
• Format: Article
• Language: English
• Subjects: Collective excitation; Condensed matter; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Dispersion relation; Electric field strength; Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Gallium arsenide; Magnetic fields; Mathematical analysis; Physics; Plasmon; Quantum wells; Raman intensity; Random phase approximation; Semiconductors; Superlattice; Superlattices
• ISSN: 0921-4526; 1873-2135
• DOI: 10.1016/j.physb.2014.05.067

The behavior of multiple quantum well GaAs/AlxGa1−xAs semiconductor superlattices with different dielectric interfaces are considered under magnetic and electric fields perpendicular and parallel to the superlattice axis, respectively. The parabolic confining potential well was varied with the compositional rate of the AlxGa1−xAs barrier. Taking into account intrasubband and intersubband transitions and using random phase approximation, the density-density correlation function is calculated as a function of the magnetic field strength, compositional rate, and averaged electric field strength over the quantum well. In this way, the dispersion of the surface and bulk state energies are obtained. The Raman intensities for these states are also obtained as a function of incoming light energy for various averaged electric field strengths over the quantum well.