A simple silicon compatible 40 nm electroplated copper T-gate process

This paper reports a simple route to fabricating T-gate like structures with footprint of 40 nm using a copper electroplating process and a single electron beam lithography step without the need for lift-off. To our knowledge, these are the smallest such structures demonstrated using this approach w...

Full description

Saved in:
Bibliographic Details
Published in:Microelectronic engineering 2014-06, Vol.121, p.153-155
Main Authors: Cao, Menglin, Li, Xu, Ferguson, Susan, Thoms, Stephen, MacIntyre, Douglas, Thayne, Iain
Format: Article
Language:English
Subjects:
Beams (radiation)
Compatibility
Copper
Electron beam lithography
ELECTROPLATING
Footprints
Silicon
Steppers
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This paper reports a simple route to fabricating T-gate like structures with footprint of 40 nm using a copper electroplating process and a single electron beam lithography step without the need for lift-off. To our knowledge, these are the smallest such structures demonstrated using this approach which could also be implemented straightforwardly using conventional stepper or nanoimprint lithography for low cost, high volume silicon compatible manufacture.
ISSN:0167-9317
DOI:10.1016/j.mee.2014.05.007