GaN-based photon-recycling green light-emitting diodes with vertical-conduction structure

A p-i-n structure with near-UV(n-UV) emitting InGaN/GaN multiple quantum well(MQW) structure stacked on a green unipolar InGaN/GaN MQW was epitaxially grown at the same sapphire substrate. Photon recycling green light-emitting diodes(LEDs) with vertical-conduction feature on silicon substrates were...

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Bibliographic Details
Published in:Optics express 2015-04, Vol.23 (7), p.A371-A381
Main Authors: Sheu, Jinn-Kong, Chen, Fu-Bang, Yen, Wei-Yu, Wang, Yen-Chin, Liu, Chun-Nan, Yeh, Yu-Hsiang, Lee, Ming-Lun
Format: Article
Language:English
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Summary:A p-i-n structure with near-UV(n-UV) emitting InGaN/GaN multiple quantum well(MQW) structure stacked on a green unipolar InGaN/GaN MQW was epitaxially grown at the same sapphire substrate. Photon recycling green light-emitting diodes(LEDs) with vertical-conduction feature on silicon substrates were then fabricated by wafer bonding and laser lift-off techniques. The green InGaN/GaN QWs were pumped with n-UV light to reemit low-energy photons when the LEDs were electrically driven with a forward current. Efficiency droop is potentially insignificant compared with the direct green LEDs due to the increase of effective volume of active layer in the optically pumped green LEDs, i.e., light emitting no longer limited in the QWs nearest to the p-type region to cause severe Auger recombination and carrier overflow losses.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.23.00A371