Fabrication and optical characterization of large scale membrane containing InP/AlGaInP quantum dots

Single-photon sources with a high extraction efficiency are a prerequisite for applications in quantum communication and quantum computation schemes. One promising approach is the fabrication of a quantum dot containing membrane structure in combination with a solid immersion lens and a metal mirror...

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Bibliographic Details
Published in:Nanotechnology 2015-06, Vol.26 (23), p.235201-235201
Main Authors: Niederbracht, H, Hargart, F, Schwartz, M, Koroknay, E, Kessler, C A, Jetter, M, Michler, P
Format: Article
Language:English
Subjects:
III/V semiconductor
InP quantum dot
semiconductor membrane
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Summary:Single-photon sources with a high extraction efficiency are a prerequisite for applications in quantum communication and quantum computation schemes. One promising approach is the fabrication of a quantum dot containing membrane structure in combination with a solid immersion lens and a metal mirror. We have fabricated an 80 nm thin semiconductor membrane with incorporated InP quantum dots in an AlGaInP double hetero barrier via complete substrate removal. In addition, a gold layer was deposited on one side of the membrane acting as a mirror. The optical characterization shows in detail that the unique properties of the quantum dots are preserved in the membrane structure.
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/26/23/235201