Current-induced magnetization switching at low current densities in current-perpendicular-to-plane structural Fe sub(3)Si/FeSi sub(2) artificial lattices

Current-perpendicular-to-plane (CPP) junctions of Fe sub(3)Si/FeSi sub(2) were fabricated from Fe sub(3)Si/FeSi sub(2) artificial lattice films, which were prepared by facing-target direct-current sputtering, by employing a focused ion beam (FIB) technique. CPP structurization was confirmed by scann...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2014-01, Vol.53 (2S), p.02BC15-1-02BC15-5
Main Authors: Sakai, Ken-ichiro, Noda, Yuta, Daio, Takeshi, Tsumagari, Daiki, Tominaga, Aki, Takeda, Kaoru, Yoshitake, Tsuyoshi
Format: Article
Language:English
Subjects:
Density
Disilicides
Intermetallics
Iron compounds
Lattices
Magnetization
Semiconductors
Silicides
Switching
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Summary:Current-perpendicular-to-plane (CPP) junctions of Fe sub(3)Si/FeSi sub(2) were fabricated from Fe sub(3)Si/FeSi sub(2) artificial lattice films, which were prepared by facing-target direct-current sputtering, by employing a focused ion beam (FIB) technique. CPP structurization was confirmed by scanning electron microscopy. The CPP junctions, in which antiferromagnetic interlayer coupling is induced between the Fe sub(3)Si layers, exhibited a clear hysteresis loop in the electrical resistance for current injection, which is probably due to current-induced magnetization switching. The critical current density for it is approximately 3.3 x 10 super(1)A/cm super(2), which is at least four orders smaller than the values that have ever been reported.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.53.02BC15